Exciton emissions of CdS nanowire array fabricated on Cd foil by the solvothermal method

doi:10.1088/1674-1056/abbbf1

Abstract Nanowires have recently attracted more attention because of their low-dimensional structure, tunable optical and electrical properties for next-generation nanoscale optoelectronic devices. CdS nanowire array, which is (002)-orientation growth and approximately perpendicular to Cd foil substrate, has been fabricated by the solvothermal method. In the temperature-dependent photoluminescence, from short wavelength to long wavelength, four peaks can be ascribed to the emissions from the bandgap, the transition from the holes being bound to the donors or the electrons being bound to the acceptors, the transition from Cd interstitials to Cd vacancies, and the transition from S vacancies to the valence band, respectively. In the photoluminescence of 10 K, the emission originated from the bandgap appears in the form of multiple peaks. Two stronger peaks and five weaker peaks can be observed. The energy differences of the adjacent peaks are close to 38 meV, which is ascribed to the LO phonon energy of CdS. For the multiple peaks of bandgap emission, from low energy to high energy, the first, second, and third peaks are contributed to the third-order, second-order, and first-order phonon replica of the free exciton A, respectively; the fourth peak is originated from the free exciton A; the fifth peak is contributed to the first-order phonon replica of the excitons bound to neutral donors; the sixth and seventh peaks are originated from the excitons bound to neutral donors and the light polarization parallel to the c axis of hexagonal CdS, respectively.

Keywords: CdS nanowires array solvothermal method photoluminescence exciton emissions

Received: 07 July 2020
Revised: 18 September 2020
Accepted manuscript online: 28 September 2020

PACS:	61.46.Km	(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
	78.55.-m	(Photoluminescence, properties and materials)
	78.55.Et	(II-VI semiconductors)
	81.16.Be	(Chemical synthesis methods)

Fund: Project supported by the Natural Science Foundation of Henan Province, China (Grant No. 202300410304) and Key Research Project for Science and Technology of the Education Department of Henan Province, China (Grant No. 21A140021).

Corresponding Authors: ^†Corresponding author. E-mail: liyong@pdsu.edu.cn

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Yong Li(李勇), Peng-Fei Ji(姬鹏飞), Ya-Juan Hao(郝亚娟), Yue-Li Song(宋月丽), Feng-Qun Zhou(周丰群), and Shu-Qing Yuan(袁书卿) Exciton emissions of CdS nanowire array fabricated on Cd foil by the solvothermal method 2021 Chin. Phys. B 30 016104

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Exciton emissions of CdS nanowire array fabricated on Cd foil by the solvothermal method

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