A 2DEG back-gated graphene/AlGaN deep-ultraviolet photodetector with ultrahigh responsivity

doi:10.1088/1674-1056/abb3eb

Abstract A graphene/AlGaN deep-ultraviolet (UV) photodetector is presented with ultrahigh responsivity of 3.4×10⁵ A/W at 261 nm incident wavelength and 149 pW light power. A gain mechanism based on electron trapping at the potential well is proposed to be responsible for the high responsivity. To optimize the trade-off between responsivity and response speed, a back-gate electrode is designed at the AlGaN/GaN two-dimensional electron gas (2DEG) area which eliminates the persistent photocurrent effect and shortens the recovery time from several hours to milliseconds. The 2DEG gate is proposed as an alternative way to apply the back gate electrode on AlGaN based devices on insulating substrates. This work sheds light on a possible way for weak deep-UV light detection.

Keywords: graphene/AlGaN deep-ultraviolet high responsivity photodetector

Received: 08 July 2020
Revised: 10 August 2020
Accepted manuscript online: 01 September 2020

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	81.05.Ea	(III-V semiconductors)

Fund: Project supported by the Research Innovation Fund for College Students of Beijing University of Posts and Telecommunications (Grant No. 202002046) and the National Natural Science Foundation of China (Grant No. 61804012).

Corresponding Authors: ^†These authors contributed equally to this work. ^‡Corresponding author. E-mail: anqihu@bupt.edu.cn ^§Corresponding author. E-mail: guox@bupt.edu.cn

Cite this article:

Jinhui Gao(高金辉), Yehao Li(李叶豪), Yuxuan Hu(胡宇轩), Zhitong Wang(王志通), Anqi Hu(胡安琪), and Xia Guo(郭霞)\ccclink A 2DEG back-gated graphene/AlGaN deep-ultraviolet photodetector with ultrahigh responsivity 2020 Chin. Phys. B 29 128502

[1] Sang L, Liao M and Sumiya M Sensors 13 10482 DOI: 10.3390/s1308104822013
[2] Cicek E, McClintock R, Cho C Y, Rahnema B and Razeghi M Appl. Phys. Lett. 103 191108 DOI: 10.1063/1.48290652013
[3] Kumar M, Lee C Y, Sekiguchi H, Okada H and Wakahara A Semicond. Sci. Technol. 28 094005 DOI: 10.1088/0268-1242/28/9/0940052013
[4] Hearne S J, Han J, Lee S R, Floro J A, Follstaedt D M, Chason E and Tsong I S T Appl. Phys. Lett. 76 1534 DOI: 10.1063/1.1260872000
[5] Konstantatos G, Badioli M, Gaudreau L, Osmond J, Bernechwa M, de Garcia A F P, Gatti F and Koppens F H L Nat. Nanotechnol. 7 363 DOI: 10.1038/nnano.2012.602012
[6] Chen Z, Cheng Z, Wang J, Wan X, Shu C, Tsang H K, Ho H P and Xu J Adv. Opt. Mater. 3 1207 DOI: 10.1002/adom.2015001272015
[7] Hu A, Tian H, Liu Q, Wang L, Wang L, He X, Luo Y and Guo X Adv. Opt. Mater. 7 1801792 DOI: 10.1002/adom.2018017922019
[8] Liu Q, Tian H, Li J, Hu A, He X, Sui M, Guo X Adv. Opt. Mater. 7 1900455 DOI: 10.1002/adom.2019004552019
[9] Tian H J, Liu Q L, Zhou C X, Zhan X J, He X Y, Hu A Q and Guo X Appl. Phys. Lett. 113 121109 DOI: 10.1063/1.50345272018
[10] Lin F, Chen S, Meng J, Tse G, Fu X, Shen B, Liao Z and Yu D Appl. Phys. Lett. 105 073103 DOI: 10.1063/1.48936092014
[11] Nikitskiy I, Goossens S, Kufer D, Lasanta T, Navickaite G, Koppens F H L and Konstantatos G Nat. Commun. 7 11954 DOI: 10.1038/ncomms119542016
[12] Ni Z, Ma L, Du S, Xu Y, Yuan M, Fang H, Wang Z, Xu M, Li D, Yang J, Hu W, Pi X and Yang D ACS Nano 11 9854 DOI: 10.1021/acsnano.7b035692017
[13] Bessonov A A, Allen M, Liu Y, Malik S, Bottomley J, Rushton A, Medina-Salazar I and Ryhänen T ACS Nano 11 5547 DOI: 10.1021/acsnano.7b007602017
[14] Knigge A, Brendel M, Brunner F, Einfeldt S, Knauer A, K V, Zeimer U and Weyers M Jpn. J. Appl. Phys. 52 (8S) 08JF03 DOI: 10.7567/JJAP.52.08JF032013
[15] Li D, Sun X, Song H, Li Z, Chen Y, Jiang H and Miao G Adv. Mater. 24 845 DOI: 10.1002/adma.2011025852012
[16] Shen L, Pun E Y B and Ho J C Mater. Chem. Front 1 630 DOI: 10.1039/C6QM00279J2017
[17] Wang X, Zhang Y, Chen X, He M, Liu C, Yin Y, Zou X and Li S Nanoscale 6 12009 DOI: 10.1039/C4NR03581J2014
[18] Zhang X, Liu B, Liu Q, Yang W, Xiong C, Li J and Jiang X ACS Appl. Mater. Interfaces 9 2669 DOI: 10.1021/acsami.6b149072017
[19] Lu Y, Wu Z, Xu W and Lin S Nanotechnology 27 48LT03 DOI: 10.1088/0957-4484/27/48/48LT032016
[20] Yoshikawa A, Yamamoto Y, Murase T, Iwaya M, Takeuchi T, Kamiyama S and Akasaki I Jpn. J. Appl. Phys. 55 (5S) 05FJ04 DOI: 10.7567/JJAP.55.05FJ042016

[1]	High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices Junkai Jiang(蒋俊锴), Faran Chang(常发冉), Wenguang Zhou(周文广), Nong Li(李农), Weiqiang Chen(陈伟强), Dongwei Jiang(蒋洞微), Hongyue Hao(郝宏玥), Guowei Wang(王国伟), Donghai Wu(吴东海), Yingqiang Xu(徐应强), and Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2023, 32(3): 038503.
[2]	A self-driven photodetector based on a SnS₂/WS₂ van der Waals heterojunction with an Al₂O₃ capping layer Hsiang-Chun Wang(王祥骏), Yuheng Lin(林钰恒), Xiao Liu(刘潇), Xuanhua Deng(邓煊华),Jianwei Ben(贲建伟), Wenjie Yu(俞文杰), Deliang Zhu(朱德亮), and Xinke Liu(刘新科). Chin. Phys. B, 2023, 32(1): 018504.
[3]	Dramatic reduction in dark current of β-Ga₂O₃ ultraviolet photodectors via β-(Al_0.25Ga_0.75)₂O₃ surface passivation Jian-Ying Yue(岳建英), Xue-Qiang Ji(季学强), Shan Li(李山), Xiao-Hui Qi(岐晓辉), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2023, 32(1): 016701.
[4]	A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga₂O₃ photoconductor with high photo response Zeng Liu(刘增), Yu-Song Zhi(支钰崧), Mao-Lin Zhang(张茂林), Li-Li Yang(杨莉莉), Shan Li(李山), Zu-Yong Yan(晏祖勇), Shao-Hui Zhang(张少辉), Dao-You Guo(郭道友), Pei-Gang Li(李培刚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2022, 31(8): 088503.
[5]	A self-powered and sensitive terahertz photodetection based on PdSe₂ Jie Zhou(周洁), Xueyan Wang(王雪妍), Zhiqingzi Chen(陈支庆子), Libo Zhang(张力波), Chenyu Yao(姚晨禹), Weijie Du(杜伟杰), Jiazhen Zhang(张家振), Huaizhong Xing(邢怀中), Nanxin Fu(付南新), Gang Chen(陈刚), and Lin Wang(王林). Chin. Phys. B, 2022, 31(5): 050701.
[6]	Improving the performance of a GaAs nanowire photodetector using surface plasmon polaritons Xiaotian Zhu(朱笑天), Bingheng Meng(孟兵恒), Dengkui Wang(王登魁), Xue Chen(陈雪), Lei Liao(廖蕾), Mingming Jiang(姜明明), and Zhipeng Wei(魏志鹏). Chin. Phys. B, 2022, 31(4): 047801.
[7]	Graphene-based heterojunction for enhanced photodetectors Haiting Yao(姚海婷), Xin Guo(郭鑫), Aida Bao(鲍爱达), Haiyang Mao(毛海央),Youchun Ma(马游春), and Xuechao Li(李学超). Chin. Phys. B, 2022, 31(3): 038501.
[8]	Facile sensitizing of PbSe film for near-infrared photodetector by microwave plasma processing Kangyi Zhao(赵康伊), Shuanglong Feng(冯双龙), Chan Yang(杨婵),Jun Shen(申钧), and Yongqi Fu(付永启). Chin. Phys. B, 2022, 31(3): 038504.
[9]	A broadband self-powered UV photodetector of a β-Ga₂O₃/γ-CuI p-n junction Wei-Ming Sun(孙伟铭), Bing-Yang Sun(孙兵阳), Shan Li(李山), Guo-Liang Ma(麻国梁), Ang Gao(高昂), Wei-Yu Jiang(江为宇), Mao-Lin Zhang(张茂林), Pei-Gang Li(李培刚), Zeng Liu(刘增), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2022, 31(2): 024205.
[10]	Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector Hongyu Ma(马宏宇), Kewei Liu(刘可为), Zhen Cheng(程祯), Zhiyao Zheng(郑智遥), Yinzhe Liu(刘寅哲), Peixuan Zhang(张培宣), Xing Chen(陈星), Deming Liu(刘德明), Lei Liu(刘雷), and Dezhen Shen(申德振). Chin. Phys. B, 2021, 30(8): 087303.
[11]	High-performance self-powered photodetector based on organic/inorganic hybrid van der Waals heterojunction of rubrene/silicon Yancai Xu(徐彦彩), Rong Zhou(周荣), Qin Yin(尹钦), Jiao Li(李娇), Guoxiang Si(佀国翔), and Hongbin Zhang(张洪宾). Chin. Phys. B, 2021, 30(7): 077304.
[12]	Deep-ultraviolet and visible dual-band photodetectors by integrating Chlorin e6 with Ga₂O₃ Yue Zhao(赵越), Jin-Hao Zang(臧金浩), Xun Yang(杨珣), Xue-Xia Chen(陈雪霞), Yan-Cheng Chen(陈彦成), Kai-Yong Li(李凯永), Lin Dong(董林), and Chong-Xin Shan(单崇新). Chin. Phys. B, 2021, 30(7): 078504.
[13]	Dual-wavelength ultraviolet photodetector based on vertical (Al,Ga)N nanowires and graphene Min Zhou(周敏), Yukun Zhao(赵宇坤), Lifeng Bian(边历峰), Jianya Zhang(张建亚), Wenxian Yang(杨文献), Yuanyuan Wu(吴渊渊), Zhiwei Xing(邢志伟), Min Jiang(蒋敏), and Shulong Lu(陆书龙). Chin. Phys. B, 2021, 30(7): 078506.
[14]	High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga₂O₃ thin film Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2021, 30(5): 057301.
[15]	High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode Zhiwei Huang(黄志伟), Shaoying Ke(柯少颖), Jinrong Zhou(周锦荣), Yimo Zhao(赵一默), Wei Huang(黄巍), Songyan Chen(陈松岩), and Cheng Li(李成). Chin. Phys. B, 2021, 30(3): 037303.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

A 2DEG back-gated graphene/AlGaN deep-ultraviolet photodetector with ultrahigh responsivity

Cite this article:

Online attention