Progress on 2D topological insulators and potential applications in electronic devices

doi:10.1088/1674-1056/aba9c5

Abstract Two-dimensional topological insulators (2DTIs) have attracted increasing attention during the past few years. New 2DTIs with increasing larger spin-orbit coupling (SOC) gaps have been predicted by theoretical calculations and some of them have been synthesized experimentally. In this review, the 2DTIs, ranging from single element graphene-like materials to bi-elemental transition metal chalcogenides (TMDs) and to multi-elemental materials, with different thicknesses, structures, and phases, have been summarized and discussed. The topological properties (especially the quantum spin Hall effect and Dirac fermion feature) and potential applications have been summarized. This review also points out the challenge and opportunities for future 2DTI study, especially on the device applications based on the topological properties.

Keywords: two-dimensional materials topological insulators quantum spin Hall effect dissipation-less devices nanoelectronics

Received: 22 May 2020
Revised: 14 July 2020
Accepted manuscript online: 28 July 2020

PACS:	73.63.-b	(Electronic transport in nanoscale materials and structures)
	73.43.Nq	(Quantum phase transitions)
	03.65.Vf	(Phases: geometric; dynamic or topological)
	85.35.-p	(Nanoelectronic devices)

Fund: Project supported by the Beijing Natural Science Foundation, China (Grant Nos. Z190006 and 4192054), the National Natural Science Foundation of China (Grant Nos. 61971035, 61901038, and 61725107), Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB30000000), and Beijing Institute of Technology Research Fund Program for Young Scholars (Grant No. 3050011181814).

Corresponding Authors: Liwei Liu
E-mail: liwei.liu@bit.edu.cn

Cite this article:

Yanhui Hou(侯延辉), Teng Zhang(张腾), Jiatao Sun(孙家涛), Liwei Liu(刘立巍), Yugui Yao(姚裕贵), Yeliang Wang(王业亮) Progress on 2D topological insulators and potential applications in electronic devices 2020 Chin. Phys. B 29 097304

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