Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure

doi:10.1088/1674-1056/ab90f1

Abstract To suppress the electric field crowding at sidewall and improve the detection sensitivity of the AlGaN separate absorption and multiplication (SAM) avalanche photodiodes (APDs), we propose the new AlGaN APDs structure combining a large-area mesa with a field plate (FP). The simulated results show that the proposed AlGaN APDs exhibit a significant increase in avalanche gain, about two orders of magnitude, compared to their counterparts without FP structure, which is attributed to the suppression of electric field crowding at sidewall of multiplication layer and the reduction of the maximum electric field at the p-type GaN sidewall in p-n depletion region. Meanwhile, the APDs can produce an obviously enhanced photocurrent due to the increase in cross sectional area of multiplication region.

Keywords: AlGaN avalanche photodiodes mesa field plate

Received: 01 March 2020
Revised: 19 April 2020
Accepted manuscript online:

PACS:	85.60.Dw	(Photodiodes; phototransistors; photoresistors)
	85.60.Bt	(Optoelectronic device characterization, design, and modeling)

Fund: Project supported by the Natural Science Research Project of Anhui University, China (Grant No. KJ2019A0644), the National Natural Science Foundation of China (Grant Nos. 61634002 and 61804089), the Natural Science Alliance Foundation, China (Grant No. U1830109), the Natural Science Foundation of Anhui Province, China (Grant No. 1708085MF149), the Chuzhou University Research Project, China (Grant No. zrjz2019002), and the Project of the Higher Educational and Technology Program of Shandong Province, China (Grant No. J16LN04).

Corresponding Authors: Dun-Jun Chen
E-mail: djchen@nju.edu.cn

Cite this article:

Ke-Xiu Dong(董可秀), Dun-Jun Chen(陈敦军), Qing Cai(蔡青), Yan-Li liu(刘燕丽), Yu-Jie Wang(王玉杰) Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure 2020 Chin. Phys. B 29 088502

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Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure

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