Total dose test with γ-ray for silicon single photon avalanche diodes

doi:10.1088/1674-1056/ab9286

Abstract Gamma-ray (γ-ray) radiation for silicon single photon avalanche diodes (Si SPADs) is evaluated, with total dose of 100 krad(Si) and dose rate of 50 rad(Si)/s by using ⁶⁰Co as the γ-ray radiation source. The breakdown voltage, photocurrent, and gain have no obvious change after the radiation. However, both the leakage current and dark count rate increase by about one order of magnitude above the values before the radiation. Temperature-dependent current-voltage measurement results indicate that the traps caused by radiation function as generation and recombination centers. Both leakage current and dark count rate can be almost recovered after annealing at 200℃ for about 2 hours, which verifies the radiation damage mechanics.

Keywords: gamma-ray radiation silicon single photon avalanche diode (Si SPAD) radiation damage

Received: 15 February 2019
Revised: 23 April 2020
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)
	85.60.Gz	(Photodetectors (including infrared and CCD detectors))

Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFF0104801).

Corresponding Authors: Xia Guo
E-mail: guox@bupt.edu.cn

Cite this article:

Qiaoli Liu(刘巧莉), Haiyan Zhang(张海燕), Lingxiang Hao(郝凌翔), Anqi Hu(胡安琪), Guang Wu(吴光), Xia Guo(郭霞) Total dose test with γ-ray for silicon single photon avalanche diodes 2020 Chin. Phys. B 29 088501

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