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Chin. Phys. B, 2020, Vol. 29(8): 084209    DOI: 10.1088/1674-1056/ab9c0b
Special Issue: SPECIAL TOPIC —Terahertz physics
SPECIAL TOPIC—Terahertz physics Prev   Next  

Symmetry-broken silicon disk array as an efficient terahertz switch working with ultra-low optical pump power

Zhanghua Han(韩张华)1, Hui Jiang(姜辉)1, Zhiyong Tan(谭智勇)2,3, Juncheng Cao(曹俊诚)2,3, Yangjian Cai(蔡阳健)1
1 Shandong Provincial Key Laboratory of Optics and Photonic Devices, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China;
2 Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

The advancement of terahertz technology in recent years and its applications in various fields lead to an urgent need for functional terahertz components, among which a terahertz switch is one example of the most importance because it provides an effective interface between terahertz signals and information in another physical quantity. To date many types of terahertz switches have been investigated mainly in the form of metamaterials made from metallic structures and optically-active medium. However, these reported terahertz switches usually suffer from an inferior performance, e.g., requiring a high pump laser power density due to a low quality factor of the metallic metamaterial resonances. In this paper, we report and numerically investigate a symmetry-broken silicon disk based terahertz resonator array which exhibits one resonance with ultrahigh quality factor for normal incidence of the terahertz radiations. This resonance, which can never be excited for regular circular Si disks, can help to realize a superior terahertz switch with which only an ultra-low optical pump power density is required to modify the free carrier concentration in Si and its refractive index in the terahertz band. Our findings demonstrate that to realize a high terahertz transmittance change from 0 to above 50%, the required optical pump power density is more than 3 orders of magnitude smaller than that required for a split-ring resonator (SRR) based terahertz switch reported in the literature.

Keywords:  silicon disk      symmetry-broken      terahertz switch      photocarrier      bound state in continuum  
Received:  30 March 2020      Revised:  21 May 2020      Published:  05 August 2020
PACS:  42.60.Da (Resonators, cavities, amplifiers, arrays, and rings)  
  42.79.Ta (Optical computers, logic elements, interconnects, switches; neural networks)  

Project supported by the National Key R&D Program of China (Grant No. 2017YFA0701005) and the National Natural Science Foundation of China (Grant Nos. 11974221, 91750201, 61927813, and 61775229). Z. Han also acknowledges the support from the Taishan Scholar Program of Shandong Province, China (Grant No. tsqn201909079) and Zhejiang Provincial Natural Science Foundation of China (Grant No. LY15F050008).

Corresponding Authors:  Zhanghua Han     E-mail:

Cite this article: 

Zhanghua Han(韩张华), Hui Jiang(姜辉), Zhiyong Tan(谭智勇), Juncheng Cao(曹俊诚), Yangjian Cai(蔡阳健) Symmetry-broken silicon disk array as an efficient terahertz switch working with ultra-low optical pump power 2020 Chin. Phys. B 29 084209

[1] Bigourd D, Cuisset A, Hindle F, Matton S, Fertein E, Bocquet R and Mouret G 2006 Opt. Lett. 31 2356
[2] Nagatsuma T, Ducournau G and Renaud C C 2016 Nat. Photon. 10 371
[3] Ma J, Karl N J, Bretin S, Ducournau G and Mittleman D M 2017 Nat. Commun. 8 1
[4] Chanana A, Liu X, Zhang C, Vardeny Z V and Nahata A 2018 Sci. Adv. 4 eaar7353
[5] Seo M, Kyoung J, Park H, Koo S, Kim H, Bernien H, Kim B J, Choe J H, Ahn Y H, Kim H, Park N, Park Q, Ahn K and Kim D 2010 Nano Lett. 10 2064
[6] Chen H, Padilla W J, Zide J M O, Gossard A C, Taylor A J and Averitt R D 2006 Nature 444 597
[7] Chen H T, O'Hara J F, Azad A K, Taylor A J, Averitt R D, Shrekenhamer D B and Padilla W J 2008 Nat. Photon. 2 295
[8] Gu J, Singh R, Liu X, Zhang X, Ma Y, Zhang S, Maier S A, Tian Z, Azad A K, Chen H T, Taylor A J, Han J and Zhang W 2012 Nat. Commun. 3 1151
[9] Kuznetsov A I, Miroshnichenko A E, Brongersma M L, Kivshar Y S, Luk'yanchuk B and Luk B 2016 Science 354 aag472
[10] Sain B, Meier C and Zentgraf T 2019 Adv. Photon. 1 024002
[11] Liu S, Sinclair M B, Saravi S, Keeler G A, Yang Y, Reno J, Peake G M, Setzpfandt F, Staude I, Pertsch T and Brener I 2016 Nano Lett. 16 5426
[12] Hsu C W, Zhen B, Stone A D, Joannopoulos J D and Soljacic M 2016 Nat. Rev. Mater. 1 16048
[13] Koshelev K, Bogdanov A and Kivshar Y 2019 Sci. Bull. 64 836
[14] Aspnes D E and Studna A A 1983 Phys. Rev. B 27 985
[15] Zhang Y and Han Z 2015 AIP Adv. 5 017113
[16] Wang T, Shen S, Liu J, Zhang Y and Han Z 2016 Opt. Mater. Express 6 523
[17] Caughey D M and Thomas R E 1967 Proc. IEEE 55 2192
[18] Komma J, Schwarz C, Hofmann G, Heinert D and Nawrodt R 2012 Appl. Phys. Lett. 101 041905
[19] He X, Lin F, Liu F and Shi W 2020 J. Phys. D:Appl. Phys. 53 155105
[20] He X, Lin F, Liu F and Zhang H 2020 Nanomaterials 10 39
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