Influence comparison of N2 and NH3 nitrogen sources on AlN films grown by halide vapor phase epitaxy

doi:10.1088/1674-1056/ab90ed

Abstract A comparison of the nitrogen sources (N₂ and NH₃) influence on AlN films grown by high-temperature halide vapor phase epitaxy (HVPE) is reported. The x-ray rocking curves (XRCs) indicate that the full width at half maximum (FWHM) of (0002) plane for AlN films using N₂ as nitrogen source is generally smaller than that using NH₃. Optical microscope and atomic force microscope (AFM) results show that it is presently still more difficult to control the crack and surface morphology of AlN films with thicknesses of 5-10 μm using N₂ as the nitrogen source compared to that using NH₃. Compared with one-step growth, two-step growth strategy has been proved more effective in stress control and reducing the density of threading dislocations for AlN epilayers using N₂ as the nitrogen source. These investigations reveal that using N₂ as nitrogen source in HVPE growth of AlN is immature at present, but exhibits great potential.

Keywords: aluminum nitride halide vapor phase epitaxy surface structure nitrogen source

Received: 20 January 2020
Revised: 09 April 2020
Accepted manuscript online:

PACS:	68.55.-a	(Thin film structure and morphology)
	81.15.-z	(Methods of deposition of films and coatings; film growth and epitaxy)
	61.72.-y	(Defects and impurities in crystals; microstructure)

Fund: Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404100).

Corresponding Authors: Ke Xu
E-mail: kxu2006@sinano.ac.cn

Cite this article:

Jing-Jing Chen(陈晶晶), Jun Huang(黄俊), Xu-Jun Su(苏旭军), Mu-Tong Niu(牛牧童), Ke Xu(徐科) Influence comparison of N₂ and NH₃ nitrogen sources on AlN films grown by halide vapor phase epitaxy 2020 Chin. Phys. B 29 076802

[1]	Kaeding J F, Wu Y, Fujii T, Sharma R, Fini P T, Speck J S and Nakamura S 2004 J. Cryst. Growth 272 257
[2]	Huang C Y, Wu P Y, Chang K S, Lin Y H, Peng W C, Chang Y Y, Li J P, Yen H W, Wu Y S, Miyake H and Kuo H C 2017 AIP Adv. 7 055110
[3]	Timoshkin A Y, Bettinger H F and Schaefer H F 1997 J. Am. Chem. Soc. 119 5668
[4]	Alevli M, Ozgit C, Donmez I and Biyikli N 2011 J. Cryst. Growth 335 51
[5]	Danielsson Ö and Janzén E 2003 J. Cryst. Growth 253 26
[6]	Shen X Q, Kojima K, Shimizu M and Okumura H 2018 Crystengcomm 20 7364 [RefAutoNo] Huang J, Chen Q J, Niu M T and Xu K 2020 J. Cryst. Growth 536 125567
[7]	Huang J, Chen Q J, Niu M T and Xu K 2020 J. Cryst. Growth 536 125567
[8]	Huang J, Niu M T, Zhang J C, Wang W, wang J F and Xu K 2017 J. Cryst. Growth 459 159
[9]	Liu J Q, Wang J F, Liu Y F, Huang K, Hu X J, Zhang Y M, Xu Y, Xu K and Yang H 2009 J. Cryst. Growth 311 3080
[10]	Wu X H, Brown L M, Kapolnek D, Keller S, Keller B, DenBaars S P and Speck J S 1996 J. Appl. Phys. 80 3228
[11]	Imura M, Fujimoto N, Okada N, Balakrishnan K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Noro T, Takagi T and Bandoh A 2007 J. Cryst. Growth 300 136
[12]	Ji Z S, Wang L S, Zhao G J, Meng Y L, Li F Z, Li H J, Yang S Y and Wang Z G 2017 Chin. Phys. B 26 078102
[13]	Kitagawa S, Miyake H and Hiramatsu K 2014 Jpn. J. Appl. Phys. 53 05FL03
[14]	Su X, Zhang J, Huang J, Zhang J, Wang J and Xu K 2017 J. Cryst. Growth 467 82
[15]	Romano L T, Northrup J E and OKeefe M A 1996 Appl. Phys. Lett. 69 2394
[16]	Stolyarchuk N, Markurt T, Courville A, March K, Zúñiga-Pérez J, Vennégués P and Albrecht M 2018 Sci. Rep. 8 14111

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Influence comparison of N2 and NH3 nitrogen sources on AlN films grown by halide vapor phase epitaxy

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Influence comparison of N₂ and NH₃ nitrogen sources on AlN films grown by halide vapor phase epitaxy