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Chin. Phys. B, 2020, Vol. 29(5): 058503    DOI: 10.1088/1674-1056/ab7e96
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors

Sheng Sun(孙圣)1,2, Yuzhi Li(李育智)1,2, Shengdong Zhang(张盛东)1
1 School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
2 TCL China Star Optoelectronics Technology Co., Ltd., Shenzhen 518055, China
Abstract  This work reports on the integration of organic and inorganic semiconductors as heterojunction active layers for high-performance ambipolar transistors and complementary metal-oxide-semiconductor (CMOS)-like inverters. Pentacene is employed as a p-type organic semiconductor for its stable electrical performance, while the solution-processed scandium (Sc) substituted indium oxide (ScInO) is employed as an n-type inorganic semiconductor. It is observed that by regulating the doping concentration of Sc, the electrical performance of the n-type semiconductor could be well controlled to obtain a balance with the electrical performance of the p-type semiconductor, which is vital for achieving high-performance inverters. When the doping concentration of Sc is 10 at.%, the CMOS-like logic inverters exhibit a voltage gain larger than 80 and a wide noise margin (53% of the theoretical value). The inverters also respond well to the input signal with frequency up to 500 Hz.
Keywords:  solution-processed ScInO      ambipolar      transistor      inverter  
Received:  27 December 2019      Revised:  20 February 2020      Accepted manuscript online: 
PACS:  85.30.Pq (Bipolar transistors)  
  61.82.Fk (Semiconductors)  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574003 and 61774010) and Shenzhen Municipal Scientific Program, China (Grant Nos. GGFW20170728163447038 and JCYJ20180504165449640).
Corresponding Authors:  Shengdong Zhang     E-mail:  zhangsd@pku.edu.cn

Cite this article: 

Sheng Sun(孙圣), Yuzhi Li(李育智), Shengdong Zhang(张盛东) High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors 2020 Chin. Phys. B 29 058503

[1] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488
[2] Fortunato E M C, Barquinha P M C, Pimentel A C M B G, Goncalves A M F, Marques A J S, Pereira L M N and Martins R F P 2005 Adv. Mater. 17 590
[3] Song K, Noh J, Jun T, Jung Y, Kang H Y and Moon J 2010 Adv. Mater. 22 4308
[4] Liu Y R, S J, Lai P T and Yao R H 2014 Chin. Phys. B 23 068501
[5] Micjan M, Novota M, Telek P, Donoval M and Weis M 2019 Chin. Phys. B 28 118501
[6] Li J, Zhong D Y, Huang C X, Li X F and Zhang J H 2018 IEEE Trans. Electron. Devices 65 2838
[7] Orlandi M O 2020 Tin Oxide Materials-Synthesis, Properties, and Applications (Amsterdam: Elsevier) p. 441
[8] Smith J, Bashir A, Adamopoulos G, Anthony J E, Bradley D D C, Heeney M, McCulloch I and Anthopoulos T D 2010 Adv. Mater. 22 3598
[9] Yang C, Kwack Y, Kim S H, An T K, Hong K, Nam S, Park M, Choi W S and Park C E 2011 Org. Electron. 12 411
[10] Yang J, Wang Y M, Li Y P, Yuan Y Z, Hu Z J, Ma P F, Zhou L, Wang Q P, Song A M and Xin Q 2018 IEEE Electron Device Lett. 39 516
[11] Nakanotani H, Yahiro M, Adachi C and Yano K 2007 Appl. Phys. Lett. 90 262104
[12] Guo X J, Feng L R, Cui Q Y and Xu X L 2014 IEEE Electron Device Lett. 35 542
[13] Opitz A, Bronner M, Brütting W, Himmerlich M, Schaefer J A and Krischok S 2007 Appl. Phys. Lett. 90 212112
[14] Anthopoulos T D, Setayesh S, Smits E, Cölle M, Cantatore E, de B Blom P W M and de D M 2006 Adv. Mater. 18 1900
[15] Bisri S Z, Piliego C, Gao J and Loi M A 2014 Adv. Mater. 26 1176
[16] Zhou Y, Han S T, Zhou L, Yan Y, Huang L B, Huang J and Roy V A L 2013 J. Mater. Chem. C 1 7073
[17] Luo H, Liang L Y, Cao H T, Dai M Z, Lu Y C and Wang M 2015 ACS Appl. Mater. Inter. 7 17023
[18] Lan L F, Zhao M J, Xiong N N, Xiao P, Shi W, Xu M and Peng J B 2012 IEEE Electron Device Lett. 33 827
[19] Brotherton S D 2013 Introduction to Thin Film Transistors (Heidelberg: Springer) p. 46
[20] Song W, Lan L F, Li M L, Wang L, Lin Z G, Sun S, Li Y Z, Song E L, Gao P X, Li Y and Peng J B 2017 J. Phys. D: Appl. Phys. 50 385108
[21] Song W, Lan L F, Xiao P, Lin Z G, Sun S and Peng J B 2016 IEEE Trans. Electron. Devices 63 4315
[22] Choi Y, Kim G H, Jeong W H, Bae J H, Kim H J, Hong J M and Yu W J 2010 Appl. Phys. Lett. 97 162102
[23] Steudel S, Vusser S D, Jonge S D, Janssen D, Verlaak S, Genoe J and Heremans P 2004 Appl. Phys. Lett. 85 4400
[24] Risteska A, Chan K Y, Anthopoulos T D, Gordijn A, Stiebig H, Nakamura M and Knipp D 2012 Org. Electron. 13 2816
[25] Baeg K J, Caironi M and Noh Y Y 2013 Adv. Mater. 25 4210
[26] Klauk H 2010 Chem. Soc. Rev. 39 2643
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