Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

doi:10.1088/1674-1056/ab7909

Abstract The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized. Compared with the Schottky barrier diode (SBD) without boron-implanted termination, this SBD effectively improved the breakdown voltage from 189 V to 585 V and significantly reduced the reverse leakage current by 10⁵ times. In addition, a high I_on/I_off ratio of ～10⁸ was achieved by the boron-implanted technology. We used Technology Computer Aided Design (TCAD) to analyze reasons for the improved performance of the SBD with boron-implanted termination. The improved performance of diodes may be attributed to that B⁺ could confine free carriers to suppress electron field crowding at the edge of the diode, which could improve the breakdown voltage and suppress the reverse leakage current.

Keywords: termination technology boron ion implantation vertical GaN Schottky barrier diode

Received: 07 January 2020
Revised: 07 February 2020
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	51.50.+v	(Electrical properties)

Fund: Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404100) and Science and Technology Planning Project of Guangdong Province, China (Grant No. 2017B010112001).

Corresponding Authors: Jian-Feng Wang, Ke Xu
E-mail: jfwang2006@sinano.ac.cn;kxu2006@sinano.ac.cn

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Wei-Fan Wang(王伟凡), Jian-Feng Wang(王建峰), Yu-Min Zhang(张育民), Teng-Kun Li(李腾坤), Rui Xiong(熊瑞), Ke Xu(徐科) Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination 2020 Chin. Phys. B 29 047305

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Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

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