Comparison study of GaN films grown on porous andplanar GaN templates

doi:10.1088/1674-1056/ab6c48

Abstract The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition (MOCVD)-GaN template by halide vapor phase epitaxy (HVPE). The analysis results indicated that the GaN films grown on porous and planar GaN templates under the same growth conditions have similar structural, optical, and electrical properties. But the porous GaN templates could significantly reduce the stress in the HVPE-GaN epilayer and enhance the photoluminescence (PL) intensity. The voids in the porous template were critical for the strain relaxation in the GaN films and the increase of the PL intensity. Thus, the porous GaN converted from β-Ga₂O₃ film as a novel promising template is suitable for the growth of stress-free GaN films.

Keywords: GaN porous template stress

Received: 24 November 2019
Revised: 10 January 2020
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	81.05.Rm	(Porous materials; granular materials)
	83.85.St	(Stress relaxation ?)

Fund: Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404201), the State Key R&D Program of Jiangsu Province, China (Grant No. BE2019103), the Six-Talent Peaks Project of Jiangsu Province, China (Grant No. XCL-107), the Fund from the Solid-state Lighting and Energy-saving Electronics Collaborative Innovation Center, PAPD, and the Fund from the State Grid Shandong Electric Power Company.

Corresponding Authors: Xiang-Qian Xiu, Rong Zhang
E-mail: xqxiu@nju.edu.cn;rzhang@nju.edu.cn

Cite this article:

Shan Ding(丁姗), Yue-Wen Li(李悦文), Xiang-Qian Xiu(修向前), Xue-Mei Hua(华雪梅), Zi-Li Xie(谢自力), Tao Tao(陶涛), Peng Chen(陈鹏), Bin Liu(刘斌), Rong Zhang(张荣), You-Dou Zheng(郑有炓) Comparison study of GaN films grown on porous andplanar GaN templates 2020 Chin. Phys. B 29 038103

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Comparison study of GaN films grown on porous andplanar GaN templates

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