Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

doi:10.1088/1674-1056/ab5fc4

Abstract Geant4 Monte Carlo simulation results of the single event upset (SEU) induced by protons with energy ranging from 0.3 MeV to 1 GeV are reported. The SEU cross section for planar and three-dimensional (3D) die-stacked SRAM are calculated. The results show that the SEU cross sections of the planar device and the 3D device are different from each other under low energy proton direct ionization mechanism, but almost the same for the high energy proton. Besides, the multi-bit upset (MBU) ratio and pattern are presented and analyzed. The results indicate that the MBU ratio of the 3D die-stacked device is higher than that of the planar device, and the MBU patterns are more complicated. Finally, the on-orbit upset rate for the 3D die-stacked device and the planar device are calculated by SPACE RADIATION software. The calculation results indicate that no matter what the orbital parameters and shielding conditions are, the on-orbit upset rate of planar device is higher than that of 3D die-stacked device.

Keywords: 3D-IC single event upset Geant4 proton

Received: 14 October 2019
Revised: 03 December 2019
Accepted manuscript online:

PACS:	61.82.Fk	(Semiconductors)
	61.80.Jh	(Ion radiation effects)
	42.88.+h	(Environmental and radiation effects on optical elements, devices, and systems)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11690041 and 11675233) and the Fund from the Science and Technology on Analog Integrated Circuit Laboratory, China (Grant No. JCKY2019210C054).

Corresponding Authors: Bing Ye, Jie Liu
E-mail: yebing@impcas.ac.cn;j.liu@impcas.ac.cn

Cite this article:

Bing Ye(叶兵), Li-Hua Mo(莫莉华), Tao Liu(刘涛), Jie Luo(罗捷), Dong-Qing Li(李东青), Pei-Xiong Zhao(赵培雄), Chang Cai(蔡畅), Ze He(贺泽), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东), Jie Liu(刘杰) Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device 2020 Chin. Phys. B 29 026101

[1]	Sadaka M, Radu I and Di C L 2010 2010 IEEE International Conference on Integrated Circuit Design and Technology, June 2-4, 2010, Grenoble, France, p. 106
[2]	De M K, De M P, Sabuncuoglu T D, Baert K, Beyne E, Mertens R and Van H C 2005 ESA Round Table Micro/Nano Technol. For Space, January, 2005, Leuven, Belgium
[3]	The 3D-PLUS company homepage: http://www.3d-plus.com
[4]	Zhang W and Li T 2008 Proceedings of the 41st Annual IEEE/ACM International Symposium on Microarchitecture, November 8-12, 2008, Washington, USA, p. 435
[5]	Gouker P M, Tyrrell B, Renzi M, Chen C, Wyatt P, Ahlbin J R, Weeden-Wright S, Atkinson N M, Gaspard N J and Bhuva B L 2011 IEEE Trans. Nucl. Sci. 58 2555
[6]	Gouker P M, Tyrrell B, D'Onofrio R, Wyatt P, Soares T, Hu W, Chen C, Schwank J R, Shaneyfelt M R and Blackmore E W 2011 IEEE Trans. Nucl. Sci. 58 2845
[7]	Sun H, Ren P, Zheng N, Zhang T and Li T 2011 Microprocess. Microsyst. 35 371
[8]	Li P, Guo W, Zhao Z and Zhang M 2015 Computer Engineering and Technology (Berlin: Springer) p. 164
[9]	Han H, Chung J and Yang J S 2018 IEEE Trans. Comput. 67 1193
[10]	Song C and Zhang M 2014 Computer Engineering and Technology (Berlin: Springer) p. 176
[11]	Cao X, Xiao L, Huo M, Wang T, Li A, Qi C and Wang J 2016 arXiv: 1608.01345
[12]	Agostinelli S, Allison J, Amako K, Apostolakis J, Araujo H, Arce P, Asai M, Axen D, Banerjee S and Barrand G 2 2003 Nucl. Instrum. Methods Phys. Res. Sect. A-Accel. Spectrom. Dect. Assoc. Equip. 506 250
[13]	Heidel D F, Marshall P W, Pellish J A, Rodbell K P, LaBel K A, Schwank J R, Rauch S E, Hakey M C, Berg M D and Castaneda C M 2009 IEEE Trans. Nucl. Sci. 56 3499
[14]	Sierawski B D, Pellish J A, Reed R A, Schrimpf R D, Warren K M, Weller R A, Mendenhall M H, Black J D, Tipton A D and Xapsos M A 2009 IEEE Trans. Nucl. Sci. 56 3085
[15]	Ye B, Liu J, Wang T S, Liu T Q, Luo J, Wang B, Yin Y N, Ji Q G, Hu P P and Sun Y M 2017 Chin. Phys. B 26 088501
[16]	The OMERE software homepage: http://www.trad.fr/en/space/omere-software/
[17]	The SPACERAD software homepage: http://www.spacerad.com

[1]	A theoretical study of fragmentation dynamics of water dimer by proton impact Zhi-Ping Wang(王志萍), Xue-Fen Xu(许雪芬), Feng-Shou Zhang(张丰收), and Xu Wang(王旭). Chin. Phys. B, 2023, 32(3): 033401.
[2]	Effects of π-conjugation-substitution on ESIPT process for oxazoline-substituted hydroxyfluorenes Di Wang(汪迪), Qiao Zhou(周悄), Qiang Wei(魏强), and Peng Song(宋朋). Chin. Phys. B, 2023, 32(2): 028201.
[3]	Concerted versus stepwise mechanisms of cyclic proton transfer: Experiments, simulations, and current challenges Yi-Han Cheng(程奕涵), Yu-Cheng Zhu(朱禹丞), Xin-Zheng Li(李新征), and Wei Fang(方为). Chin. Phys. B, 2023, 32(1): 018201.
[4]	Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚). Chin. Phys. B, 2022, 31(8): 086106.
[5]	Collision site effect on the radiation dynamics of cytosine induced by proton Xu Wang(王旭), Zhi-Ping Wang(王志萍), Feng-Shou Zhang(张丰收), and Chao-Yi Qian (钱超义). Chin. Phys. B, 2022, 31(6): 063401.
[6]	Evolution of optical properties and molecular structure of PCBM films under proton irradiation Guo-Dong Xiong(熊国栋), Hui-Ping Zhu(朱慧平), Lei Wang(王磊), Bo Li(李博), Fa-Zhan Zhao(赵发展), and Zheng-Sheng Han(韩郑生). Chin. Phys. B, 2022, 31(5): 057102.
[7]	Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology Dong-Qing Li(李东青), Tian-Qi Liu(刘天奇), Pei-Xiong Zhao(赵培雄), Zhen-Yu Wu(吴振宇), Tie-Shan Wang(王铁山), and Jie Liu(刘杰). Chin. Phys. B, 2022, 31(5): 056106.
[8]	Theoretical study on the mechanism for the excited-state double proton transfer process of an asymmetric Schiff base ligand Zhengran Wang(王正然), Qiao Zhou(周悄), Bifa Cao(曹必发), Bo Li(栗博), Lixia Zhu(朱丽霞), Xinglei Zhang(张星蕾), Hang Yin(尹航), and Ying Shi(石英). Chin. Phys. B, 2022, 31(4): 048202.
[9]	Influence of intramolecular hydrogen bond formation sites on fluorescence mechanism Hong-Bin Zhan(战鸿彬), Heng-Wei Zhang(张恒炜), Jun-Jie Jiang(江俊杰), Yi Wang(王一), Xu Fei(费旭), and Jing Tian(田晶). Chin. Phys. B, 2022, 31(3): 038201.
[10]	A DFT/TD-DFT study of effect of different substituent on ESIPT fluorescence features of 2-(2'-hydroxyphenyl)-4-chloro- methylthiazole derivatives Shen-Yang Su(苏申阳), Xiu-Ning Liang(梁秀宁), and Hua Fang(方华). Chin. Phys. B, 2022, 31(3): 038202.
[11]	Ultrafast proton transfer dynamics of 2-(2'-hydroxyphenyl)benzoxazole dye in different solvents Simei Sun(孙四梅), Song Zhang(张嵩), Jiao Song(宋娇), Xiaoshan Guo(郭小珊), Chao Jiang(江超), Jingyu Sun(孙静俞), and Saiyu Wang(王赛玉). Chin. Phys. B, 2022, 31(2): 027803.
[12]	Analysis of electromagnetic pulses generated from ultrashort laser irradiation of solid targets at CLAPA Yi-Lin Xu(徐毅麟), Dong-Yu Li(李东彧), Ya-Dong Xia(夏亚东), Si-Yuan Zhang(张思源), Min-Jian Wu(吴旻剑), Tong Yang(杨童), Jun-Gao Zhu(朱军高), Hao Cheng(程浩), Chuan-Ke Wang(王传珂), Chen Lin(林晨), Ting-Shuai Li(李廷帅), and Xue-Qing Yan(颜学庆). Chin. Phys. B, 2022, 31(2): 025205.
[13]	Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs Shao-Hua Yang(杨少华), Zhan-Gang Zhang(张战刚), Zhi-Feng Lei(雷志锋), Yun Huang(黄云), Kai Xi(习凯), Song-Lin Wang(王松林), Tian-Jiao Liang(梁天骄), Teng Tong(童腾), Xiao-Hui Li(李晓辉), Chao Peng(彭超), Fu-Gen Wu(吴福根), and Bin Li(李斌). Chin. Phys. B, 2022, 31(12): 126103.
[14]	A comparative study on radiation reliability of composite channel InP high electron mobility transistors Jia-Jia Zhang(张佳佳), Peng Ding(丁芃), Ya-Nan Jin(靳雅楠), Sheng-Hao Meng(孟圣皓), Xiang-Qian Zhao(赵向前), Yan-Fei Hu(胡彦飞), Ying-Hui Zhong(钟英辉), and Zhi Jin(金智). Chin. Phys. B, 2021, 30(7): 070702.
[15]	First-principles calculations of F-, Cl-, and N-related defects of amorphous SiO₂ and their impacts on carrier trapping and proton release Xin Gao(高鑫), Yunliang Yue(乐云亮), Yang Liu(刘杨), and Xu Zuo(左旭). Chin. Phys. B, 2021, 30(4): 047104.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

Cite this article:

Online attention