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Chin. Phys. B, 2019, Vol. 28(7): 076104    DOI: 10.1088/1674-1056/28/7/076104
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Effects of helium irradiation dose and temperature on the damage evolution of Ti3SiC2 ceramic

Hua-Hai Shen(申华海)1, Xia Xiang(向霞)2, Hai-Bin Zhang(张海斌)1, Xiao-Song Zhou(周晓松)1, Hong-Xiang Deng(邓洪祥)2, Xiao-Tao Zu(祖小涛)2
1 Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China;
2 School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  

The effects of 400 keV helium ion irradiation dose and temperature on the microstructure of the Ti3SiC2 ceramic were systematically investigated by grazing incidence x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The helium irradiation experiments were performed at both room temperature (RT) and 500 °C with a fluence up to 2.0×1017 He+/cm2 that resulted in a maximum damage of 9.6 displacements per atom. Our results demonstrate that He irradiations produce a large number of nanometer defects in Ti3SiC2 lattice and then cause the dissociation of Ti3SiC2 to TiC nano-grains with the increasing He fluence. Irradiation induced cell volume swelling of Ti3SiC2 at RT is slightly higher than that at 500 °C, suggesting that Ti3SiC2 is more suitable for use in a high temperature environment. The temperature dependence of cell parameter evolution and the aggregation of He bubbles in Ti3SiC2 are different from those in Ti3AlC2. The formation of defects and He bubbles at the projected depth would induce the degradation of mechanical performance.

Keywords:  MAX      Ti3SiC2      helium irradiation      He bubble  
Received:  14 March 2019      Revised:  08 April 2019      Accepted manuscript online: 
PACS:  61.05.-a (Techniques for structure determination)  
  61.05.J- (Electron diffraction and scattering)  
  61.80.Lj (Atom and molecule irradiation effects)  
  81.05.Je (Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))  
Fund: 

Project supported by the President Foundation of the China Academy of Engineering Physics (Grant No. YZJJLX2018003) and the National Natural Science Foundation of China (Grant No. 21601168).

Corresponding Authors:  Hua-Hai Shen, Hong-Xiang Deng     E-mail:  huahaishen@caep.cn;denghx@uestc.edu.cn

Cite this article: 

Hua-Hai Shen(申华海), Xia Xiang(向霞), Hai-Bin Zhang(张海斌), Xiao-Song Zhou(周晓松), Hong-Xiang Deng(邓洪祥), Xiao-Tao Zu(祖小涛) Effects of helium irradiation dose and temperature on the damage evolution of Ti3SiC2 ceramic 2019 Chin. Phys. B 28 076104

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