| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer |
| Guang Li(李光)1, Lin-Yuan Wang(王林媛)1, Wei-Dong Song(宋伟东)1, Jian Jiang(姜健)1, Xing-Jun Luo(罗幸君)1, Jia-Qi Guo(郭佳琦)1, Long-Fei He(贺龙飞)1,2, Kang Zhang(张康)2, Qi-Bao Wu(吴启保)3, Shu-Ti Li(李述体)1 |
1 Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
2 Guangdong Institute of Semiconductor Industrial Technology, Guangdong Academy of Sciences, Guangzhou 510650, China;
3 School of Intelligent Manufacture and Equipment, Shenzhen Institute of Information Technology, Shenzhen 518172, China |
|
|
|
|
Abstract The conventional stationary Al content AlGaN electron blocking layer (EBL) in ultraviolet light-emitting diode (UV LED) is optimized by employing a linearly graded AlGaN inserting layer which is 2.0 nm Al0.3Ga0.7N/5.0 nm AlxGa1-xN/8.0 nm Al0.3Ga0.7N with decreasing value of x. The results indicate that the internal quantum efficiency is significantly improved and the efficiency droop is mitigated by using the proposed structure. These improvements are attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes, which result in an increased hole injection efficiency and a decreased electron leakage into the p-type region. In addition, the linearly graded AlGaN inserting layer can generate more holes in EBL due to the polarization-induced hole doping and a tunneling effect probably occurs to enhance the hole transportation to the active regions, which will be beneficial to the radiative recombination.
|
Received: 13 January 2019
Revised: 04 March 2019
Accepted manuscript online:
|
|
PACS:
|
85.60.Jb
|
(Light-emitting devices)
|
| |
73.40.Kp
|
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
| |
78.20.Bh
|
(Theory, models, and numerical simulation)
|
| |
87.16.ad
|
(Analytical theories)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61874161 and 11474105), the Science and Technology Program of Guangdong Province, China (Grant No. 2017B010127001), the Science and Technology Project of Shenzhen City, China (Grant No. GJHZ20180416164721073), and the Education Department Project Funding of Guangdong Province, China (Grant No. 2017KZDXM022). |
Corresponding Authors:
Shu-Ti Li
E-mail: lishuti@scnu.edu.cn
|
Cite this article:
Guang Li(李光), Lin-Yuan Wang(王林媛), Wei-Dong Song(宋伟东), Jian Jiang(姜健), Xing-Jun Luo(罗幸君), Jia-Qi Guo(郭佳琦), Long-Fei He(贺龙飞), Kang Zhang(张康), Qi-Bao Wu(吴启保), Shu-Ti Li(李述体) Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer 2019 Chin. Phys. B 28 058502
|
| [1] |
Khan A, Balakrishnan K and Katona T 2008 Nat. Photon. 2 77
|
| [2] |
Hirayama H, Yatabe T, Noguchi N, Ohashi T and Kamata N 2007 Appl. Phy. Lett. 91 091101
|
| [3] |
Hirayama H, Noguchi N, Yatabe T and Kamata N 2009 Int. J. Surg. 7 180
|
| [4] |
Katsuragawa M, Sota S, Komori M, Anbe C, Takeuchi T, Sakai H, Amano H and Akasaki I 1998 J. Cryst. Growth 189-190 528
|
| [5] |
Zhang L, Ding K, Liu N X, Wei T B, Ji X L, Ma P, Yan J C, Wang J X, Zeng Y P and Li J M 2011 Appl. Phys. Lett. 98 062103
|
| [6] |
Qin P, Song W D, Hu W X, Zhang Y W, Zhang C Z, Wang R P, Zhao L L, Xiao C, Yuan S Y and Yin Y A 2016 Chin. Phys. B 25 088505
|
| [7] |
Choi S, Kim H J, Kim S S, Liu J, Kim J, Ryou J H, Dupuis R D, Fischer A M and Ponce F A 2010 Appl. Phys. Lett. 96 3976
|
| [8] |
Tsai M C, Yen S H, Chang S H and Kuo Y K 2009 Opt. Commun. 282 1589
|
| [9] |
Li G, Song W, Wang H, Luo X, Luo X and Li S T 2018 IEEE Photonics Technology Letters 30 1071
|
| [10] |
Han S H, Lee D Y, Lee S J, Cho C Y, Kwon M K, Lee S P, Noh D Y, Kim D J, Yong C K and Park S J 2009 Appl. Phys. Lett. 94 231123
|
| [11] |
Chang Y A, Lin Y R, Chang J Y, Wang T H and Kuo Y K 2013 IEEE J. Quantum Electron. 49 553
|
| [12] |
Kuo Y K, Chen Y H, Chang J Y and Tsai M C 2012 Appl. Phys. Lett. 100 031112
|
| [13] |
Zhang Y W, Yu L, Li K, Pi H, Diao J S, Wang X F, Shen Y, Zhang C Z, Hu W X, Song W D and Li S T 2015 Superlattices Microstruct. 82 151
|
| [14] |
Fan X C, Sun H Q, Li X N, Sun H, Zhang C, Zhang Z D and Guo Z Y 2015 Superlattices Microstruct. 88 467
|
| [15] |
Huang J, Guo Z Y, Guo M, Liu Y, Yao S Y, Sun J and Sun H Q 2017 J. Electron. Mater. 46 1
|
| [16] |
Chichibu S F, Abare A C, Minsky M S, Keller S and Sota T 1998 Appl. Phys. Lett. 73 2006
|
| [17] |
Xia C S, Simon L, Li Z Q and Sheng Y 2013 Appl. Phys. Lett. 102 141101
|
| [18] |
Feng, Z H, Liu, S J, Tian, Zhang, J B and Dai 2013 Opt. Quantum Electron. 45 381
|
| [19] |
Zhang L, Wei X C, Liu N X, Lu H X and Li J M 2011 Appl. Phys. Lett. 98 101110
|
| [20] |
John S, Vladimir P, Chuanxin L, Huili X and Debdeep J 2010 Science 327 60
|
| [21] |
Zhang Z H, Chen S W H, Zhang Y, Li L, Wang S W, Tian K, Chu C, Fang M, Kuo H C and Bi W 2017 Acs Photon. 4 1846
|
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
