SnS2 quantum dots: Facile synthesis, properties, and applications in ultraviolet photodetector

doi:10.1088/1674-1056/28/3/037801

Abstract

Tin sulfide quantum dots (SnS₂ QDs) are n-type wide band gap semiconductor. They exhibit a high optical absorption coefficient and strong photoconductive property in the ultraviolet and visible regions. Therefore, they have been found to have many potential applications, such as gas sensors, resistors, photodetectors, photocatalysts, and solar cells. However, the existing preparation methods for SnS₂ QDs are complicated and require a high temperature and high pressure environments; hence they are unsuitable for large-scale industrial production. An effective method for the preparation of monodispersed SnS₂ QDs at normal temperature and pressure will be discussed in this paper. The method is facile, green, and low-cost. In this work, the structure, morphology, optical, electrical, and photoelectric properties of SnS₂ QDs are studied. The synthesized SnS₂ QDs are homogeneous in size and exhibit good photoelectric performance. A photoelectric detector based on the SnS₂ QDs is fabricated and its J-V and C-V characteristics are also studied. The detector responds under λ=365 nm light irradiation and reverse bias voltage. Its detectivity approximately stabilizes at 10¹¹ Jones at room temperature. These results show the possible use of SnS₂ QDs in photodetectors.

Keywords: SnS₂ quantum dots photoelectric properties photodetector

Received: 07 October 2018
Revised: 07 January 2019
Accepted manuscript online:

PACS:	78.67.Hc	(Quantum dots)
	84.60.Jt	(Photoelectric conversion)
	85.60.Gz	(Photodetectors (including infrared and CCD detectors))

Fund:

Project supported by the Equipment Pre-research Fund under the Equipment Development Department (EDD) of China's Central Military Commission (CMC) (Grant No. 1422030209), the Innovation Team Program of China North Industries Group Corporation Limited (NORINCO) Group (Grant No. 2017CX024), and the National Natural Science Foundation of China (Grant Nos. 61106098 and 11864044).

Corresponding Authors: Libin Tang, Jinzhong Xiang
E-mail: scitang@163.com;jzhxiang@ynu.edu.cn

Cite this article:

Yao Li(李尧), Libin Tang(唐利斌), Rujie Li(李汝劼), Jinzhong Xiang(项金钟), Kar Seng Teng, Shu Ping Lau(刘树平) SnS₂ quantum dots: Facile synthesis, properties, and applications in ultraviolet photodetector 2019 Chin. Phys. B 28 037801

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SnS2 quantum dots: Facile synthesis, properties, and applications in ultraviolet photodetector

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SnS₂ quantum dots: Facile synthesis, properties, and applications in ultraviolet photodetector