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Chin. Phys. B, 2019, Vol. 28(2): 027302    DOI: 10.1088/1674-1056/28/2/027302

Theoretical analytic model for RESURF AlGaN/GaN HEMTs

Hao Wu(吴浩), Bao-Xing Duan(段宝兴), Luo-Yun Yang(杨珞云), Yin-Tang Yang(杨银堂)
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract  In this paper, we propose a two-dimensional (2D) analytic model for the channel potential and electric field distribution of the RESURF AlGaN/GaN high electron mobility transistors (HEMTs). The model is constructed by two-dimensional Poisson's equation with appropriate boundary conditions. In the RESURF AlGaN/GaN HEMTs, we utilize the RESURF effect generated by doped negative charge in the AlGaN layer and introduce new electric field peaks in the device channels, thus, homogenizing the distribution of electric field in channel and improving the breakdown voltage of the device. In order to reveal the influence of doped negative charge on the electric field distribution, we demonstrate in detail the influences of the charge doping density and doping position on the potential and electric field distribution of the RESURF AlGaN/GaN HEMTs with double low density drain (LDD). The validity of the model is verified by comparing the results obtained from the analytical model with the simulation results from the ISE software. This analysis method gives a physical insight into the mechanism of the AlGaN/GaN HEMTs and provides reference to modeling other AlGaN/GaN HEMTs device.
Keywords:  RESURF AlGaN/GaN HEMTs      two-dimensional analytic model      potential distribution      electric field distribution  
Received:  26 October 2018      Revised:  03 December 2018      Published:  05 February 2019
PACS:  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2015CB351906), the National Natural Science Foundation of China (Grant No. 61774114), the Key Program of the National Natural Science Foundation of China (Grant No. 61334002), and the 111 Project, China (Grant No. B12026).
Corresponding Authors:  Hao Wu, Bao-Xing Duan     E-mail:;

Cite this article: 

Hao Wu(吴浩), Bao-Xing Duan(段宝兴), Luo-Yun Yang(杨珞云), Yin-Tang Yang(杨银堂) Theoretical analytic model for RESURF AlGaN/GaN HEMTs 2019 Chin. Phys. B 28 027302

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