PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces

doi:10.1088/1674-1056/28/2/026801

Abstract Polycrystalline gallium nitride (GaN) thin films were deposited on Si (100) substrates via plasma-enhanced atomic layer deposition (PEALD) under optimal deposition parameters. In this work, we focus on the research of the GaN/Si (100) interfacial properties. The x-ray reflectivity measurements show the clearly-resolved fringes for all the as-grown GaN films, which reveals a perfectly smooth interface between the GaN film and Si (100), and this feature of sharp interface is further confirmed by high resolution transmission electron microscopy (HRTEM). However, an amorphous interfacial layer (~2 nm) can be observed from the HRTEM images, and is determined to be mixture of Ga_xO_y and GaN by x-ray photoelectron spectroscopy. To investigate the effect of this interlayer on the GaN growth, an AlN buffer layer was employed for GaN deposition. No interlayer is observed between GaN and AlN, and GaN shows better crystallization and lower oxygen impurity during the initial growth stage than the GaN with an interlayer.

Keywords: gallium nitride PEALD sharp interface x-ray reflectivity high resolution transmission electron microscopy

Received: 03 November 2017
Revised: 29 November 2018
Accepted manuscript online:

PACS:	68.35.bg	(Semiconductors)
	68.37.Og	(High-resolution transmission electron microscopy (HRTEM))
	68.55.Nq	(Composition and phase identification)

Fund: Project supported by the Fundamental Research Funds for the Central Universities (Grant Nos. FRF-BR-16-018A, FRF-TP-17-022A1, and FRF-TP-17-069A1), the National Natural Science Foundation of China (Grant Nos. 61274134 and 51402064), USTB Start-up Program (Grant No. 06105033), China Postdoctoral Science Foundation (Grant No. 2018M631333), Beijing Natural Science Foundation (Grant Nos. 2184112 and 4173077), Beijing Innovation and Research Base Fund (Grant No. Z161100005016095), and the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2015387).

Corresponding Authors: Ming-Zeng Peng, Xin-He Zheng
E-mail: mzpeng@ustb.edu.cn;xinhezheng@ustb.edu.cn

Cite this article:

San-Jie Liu(刘三姐), Ying-Feng He(何荧峰), Hui-Yun Wei(卫会云), Peng Qiu(仇鹏), Yi-Meng Song(宋祎萌), Yun-Lai An(安运来), Abdul Rehman(阿布度-拉赫曼), Ming-Zeng Peng(彭铭曾), Xin-He Zheng(郑新和) PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces 2019 Chin. Phys. B 28 026801

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PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces

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