| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET |
| Xin Xie(解鑫)1,2, Da-Wei Bi(毕大伟)1, Zhi-Yuan Hu(胡志远)1, Hui-Long Zhu(朱慧龙)1,2, Meng-Ying Zhang(张梦映)1,2, Zheng-Xuan Zhang(张正选)1, Shi-Chang Zou(邹世昌)1 |
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China |
|
|
|
|
Abstract The influence of characteristics' measurement sequence on total ionizing dose effect in partially-depleted SOI nMOSFET is comprehensively studied. We find that measuring the front-gate curves has no influence on total ionizing dose effect. However, the back-gate curves' measurement has a great influence on total ionizing dose effect due to high electric field in the buried oxide during measuring. In this paper, we analyze their mechanisms and we find that there are three kinds of electrons tunneling mechanisms at the bottom corner of the shallow trench isolation and in the buried oxide during the back-gate curves' measurement, which are:Fowler-Nordheim tunneling, trap-assisted tunneling, and charge-assisted tunneling. The tunneling electrons neutralize the radiation-induced positive trapped charges, which weakens the total ionizing dose effect. As the total ionizing dose level increases, the charge-assisted tunneling is enhanced by the radiation-induced positive trapped charges. Hence, the influence of the back-gate curves' measurement is enhanced as the total ionizing dose level increases. Different irradiation biases are compared with each other. An appropriate measurement sequence and voltage bias are proposed to eliminate the influence of measurement.
|
Received: 16 August 2018
Revised: 17 September 2018
Accepted manuscript online:
|
|
PACS:
|
85.30.-z
|
(Semiconductor devices)
|
| |
61.80.-x
|
(Physical radiation effects, radiation damage)
|
| |
07.87.+v
|
(Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.))
|
| |
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
|
Corresponding Authors:
Xin Xie
E-mail: xiexin@mail.sim.ac.cn
|
Cite this article:
Xin Xie(解鑫), Da-Wei Bi(毕大伟), Zhi-Yuan Hu(胡志远), Hui-Long Zhu(朱慧龙), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌) Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET 2018 Chin. Phys. B 27 128501
|
| [1] |
Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Paillet P and Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522
|
| [2] |
Saks N S, Ancona M G and Modolo J A 1984 IEEE Trans. Nucl. Sci. 31 1249
|
| [3] |
Oldham T R and McLean F B 2003 IEEE Trans. Nucl. Sci. 50 483
|
| [4] |
Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P and Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1833
|
| [5] |
Dai L H, Liu X N, Zhang M Y, Zhang L Q, Hu Z Y, Bi D W, Zhang Z X and Zou S C 2017 Microelectron. Reliab. 74 74
|
| [6] |
Liu X N, Dai L H, Ning B X and Zou S C 2017 Chin. Phys. Lett. 34 016103
|
| [7] |
Peng C, Hu Z Y, Ning B X, Huang H X, Zhang Z X, Bi D W, En Y F and Zou S C 2014 IEEE Electron Dev. Lett. 35 503
|
| [8] |
Peng C, Zhang Z X, Hu Z Y, Huang H X, Ning B X and Bi D W 2013 Chin. Phys. Lett. 30 098502
|
| [9] |
Liu Z L, Hu Z Y, Zhang Z X, Shao H, Ning B X, Chen M, Bi D W and Zou S C 2011 IEEE Trans. Nucl. Sci. 58 1324
|
| [10] |
Wang Z, Feng C, Gu Q, Yu L H and Zhao Z T 2017 Nucl. Sci. Tech. 28 151
|
| [11] |
Zheng Q W, Cui J W, Yu X F, Guo Q, Zhou H and Ren D Y 2014 Chin. Phys. Lett. 31 126101
|
| [12] |
Ning B X, Bi D W, Huang H X, Zhang Z X, Hu Z Y, Chen M and Zou S C 2013 Microelectron. Reliab. 53 259
|
| [13] |
Zhang Y, Huang H, Bi D, Tang M and Zhang Z 2014 Nucl. Instrum. Methods Phys. Res. Sect. A-Accel. Spectrom. Dect. Assoc. Equip. 745 128
|
| [14] |
Huang H, Bi D, Ning B, Zhang Y, Zhang Z and Zou S 2013 IEEE Trans. Nucl. Sci. 60 1354
|
| [15] |
Dai L H, Bi D W, Zhang Z X, Xie X, Hu Z Y, Huang H X and Zou S C 2018 Chin. Phys. Lett. 35 056101
|
| [16] |
Ning B X, Bi D W, Huang H X, Zhang Z X, Chen M and Zou S C 2013 Microelectron. J. 44 86
|
| [17] |
Huang H, Bi D and Zhang Z 2014 Microelectron. J. 45 759
|
| [18] |
Liu Y, Chen H B, Liu Y R, Wang X, En Y F, Li B and Lu Y D 2015 Chin. Phys. B 24 088503
|
| [19] |
Ortiz-Conde A, Sanchez F J G, Liou J J, Cerdeira A, Estrada M and Yue Y 2002 Microelectron. Reliab. 42 Pii s0026-2714(02)00027-6 583
|
| [20] |
Nazarov A N, Kilchytska V I, Houk Y and Ballutaud D 2003 J. Appl. Phys. 94 1823
|
| [21] |
Chou A I, Lai K, Kumar K, Chowdhury P and Lee J C 1997 Appl. Phys. Lett. 70 3407
|
| [22] |
Svensson C and Lundstrom I 1973 J. Appl. Phys. 44 4657
|
| [23] |
Stahlbush R E 1997 IEEE Trans. Nucl. Sci. 44 2106
|
| [24] |
Gruber O, Paillet P, Autran J L, Aspar B and AubertonHerve A J 1997 Microelectron. Eng. 36 387
|
| [25] |
Gruber O, Paillet P, Musseau O, Marcandella C, Aspar B and Auberton-Herve A J 1998 IEEE Trans. Nucl. Sci. 45 1402
|
| [26] |
Maserjian J and Zamani N 1982 J. Vac. Sci. Technol. 20 743
|
| [27] |
Schmidlin F W 1966 J. Appl. Phys. 37 2823
|
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
