Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

doi:10.1088/1674-1056/27/10/108501

Abstract

The synergistic effect of total ionizing dose (TID) on single event effect (SEE) in SiGe heterojunction bipolar transistor (HBT) is investigated in a series of experiments. The SiGe HBTs after being exposed to ⁶⁰Co γ irradiation are struck by pulsed laser to simulate SEE. The SEE transient currents and collected charges of the un-irradiated device are compared with those of the devices which are irradiated at high and low dose rate with various biases. The results show that the SEE damage to un-irradiated device is more serious than that to irradiated SiGe HBT at a low applied voltage of laser test. In addition, the γ irradiations at forward and all-grounded bias have an obvious influence on SEE in the SiGe HBT, but the synergistic effect after cutting off the γ irradiation is not significant. The influence of positive oxide-trap charges induced by TID on the distortion of electric field in SEE is the major factor of the synergistic effect. Moreover, the recombination of interface traps also plays a role in charge collection.

Keywords: SiGe HBT synergistic effect single event effects total ionizing dose

Received: 07 May 2018
Revised: 09 July 2018
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	61.80.Az	(Theory and models of radiation effects)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	75.40.Mg	(Numerical simulation studies)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61704127 and 61574171) and the Fundamental Research Funds for the Central Universities, China (Grant No. XJS17067).

Corresponding Authors: Juan Feng
E-mail: fengj@xidian.edu.cn

Cite this article:

Jin-Xin Zhang(张晋新), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Qi Guo(郭旗), Feng-Qi Zhang(张凤祁), Juan Feng(冯娟), Xin Wang(王信), Yin Wei(魏莹), Xian-Xiang Wu(吴宪祥) Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 2018 Chin. Phys. B 27 108501

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Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

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