Effects of growth conditions on optical quality and surface morphology of InGaAsBi

doi:10.1088/1674-1056/27/4/048101

Abstract The effects of Bi flux and pressure of AsH₃ on Bi incorporation, surface morphology and optical properties of InGaAsBi grown by gas source molecular beam epitaxy are studied. It is found that using relatively low pressure of AsH₃ and high Bi flux can strengthen the effect on the incorporation of Bi and increase its content linearly with Bi flux until it nearly reaches a saturation value. The result from Rutherford backscattering spectroscopy (RBS) confirms that the Bi incorporation can increase up to 1.13%. By adjusting Bi and As flux, we could improve the surface morphology of InGaAsBi sample. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InGaAs bandgap.

Keywords: compound semiconductor gas source molecular beam epitaxy bismide

Received: 01 November 2017
Revised: 26 December 2017
Accepted manuscript online:

PACS:

81.05.Ea

(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61434006) and the National Basic Research Program of China (Grant No. 2014CB643902).

Corresponding Authors: Shu-Min Wang
E-mail: shumin@mail.sim.ac.cn

Cite this article:

Jia-Kai Li(李家恺), Li-Kun Ai(艾立鹍), Ming Qi(齐鸣), An-Hui Xu(徐安怀), Shu-Min Wang(王庶民) Effects of growth conditions on optical quality and surface morphology of InGaAsBi 2018 Chin. Phys. B 27 048101

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