Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants

doi:10.1088/1674-1056/26/9/097301

Abstract We adopt a self-consistent real space Kerker method to prevent the divergence from charge sloshing in the simulating transistors with realistic discrete dopants in the source and drain regions. The method achieves efficient convergence by avoiding unrealistic long range charge sloshing but keeping effects from short range charge sloshing. Numerical results show that discrete dopants in the source and drain regions could have a bigger influence on the electrical variability than the usual continuous doping without considering charge sloshing. Few discrete dopants and the narrow geometry create a situation with short range Coulomb screening and oscillations of charge density in real space. The dopants induced quasi-localized defect modes in the source region experience short range oscillations in order to reach the drain end of the device. The charging of the defect modes and the oscillations of the charge density are identified by the simulation of the electron density.

Keywords: electron transport nanowire transistor non-equilibrium Green's function dopant

Received: 02 April 2017
Revised: 12 June 2017
Accepted manuscript online:

PACS:	73.23.-b	(Electronic transport in mesoscopic systems)
	73.63.-b	(Electronic transport in nanoscale materials and structures)
	72.10.Fk	(Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11104069).

Corresponding Authors: Chang-Sheng Li
E-mail: lcs135@163.com

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Chang-Sheng Li(李长生), Lei Ma(马磊), Jie-Rong Guo(郭杰荣) Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants 2017 Chin. Phys. B 26 097301

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Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants

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