Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

doi:10.1088/1674-1056/26/5/058502

Abstract The thermal failure induced by high power microwave (HPM) in a complementary metal oxide semiconductor (CMOS) inverter is investigated and its dependence on microwave parameters is discussed in detail. An analytical model of the temperature distribution is established and the relationships between hotspot temperature and pulse width and between hotspot temperature and frequency are predicted, which reveals a more severe rise in temperature under the influence of microwave with longer width and lower frequency. The temperature variation mechanism and the theoretical temperature model are validated and explained by the simulation. Furthermore, variation trend of damage threshold with microwave parameters is derived theoretically, and the conclusions are consistent with simulation results and reported data.

Keywords: temperature model microwave damage pulse width frequency effect

Received: 03 December 2016
Revised: 18 January 2017
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Fund: Project supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214. XY.K).

Corresponding Authors: Yu-Hang Zhang
E-mail: yhzhang0916@foxmail.com

Cite this article:

Yu-Hang Zhang(张宇航), Chang-Chun Chai(柴常春), Yang Liu(刘阳), Yin-Tang Yang(杨银堂), Chun-Lei Shi(史春蕾), Qing-Yang Fan(樊庆扬), Yu-Qian Liu(刘彧千) Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter 2017 Chin. Phys. B 26 058502

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Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

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