An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect

doi:10.1088/1674-1056/26/5/058501

Abstract An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of InAs/AlSb HFET, in which an optimized fitting function D(ωτ_i) in the form of least square approximation is proposed in order to further enhance the accuracy in modeling the frequency dependency of the impact ionization effect. The enhanced model with D(ωτ_i) can accurately characterize the key S parameters of InAs/AlSb HFET in a wide frequency range with a very low error function EF. It is demonstrated that the new fitting function D(ωτ_i) is helpful in further improving the modeling accuracy degree.

Keywords: InAs/AlSb HFET impact ionization frequency dependency small-signal equivalent circuit model

Received: 17 December 2016
Revised: 04 February 2016
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Corresponding Authors: Hui Guo
E-mail: Guohui@mail.xidian.edu.cn

Cite this article:

He Guan(关赫), Hui Guo(郭辉) An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect 2017 Chin. Phys. B 26 058501

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An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect

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