Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell

doi:10.1088/1674-1056/26/4/048104

Abstract Intrinsic hydrogenated amorphous silicon (a-Si:H) film is deposited on n-type crystalline silicon (c-Si) wafer by hot-wire chemical vapor deposition (HWCVD) to analyze the amorphous/crystalline heterointerface passivation properties. The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system, and a simple method of determining the interface state density (D_it) from lifetime measurement is proposed. The interface state density (D_it) measurement is also performed by using deep-level transient spectroscopy (DLTS) to prove the validity of the simple method. The microstructures and hydrogen bonding configurations of a-Si:H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry (SE) and Fourier transform infrared spectroscopy (FTIR) respectively. Lower values of interface state density (D_it) are obtained by using a-Si:H film with more uniform, compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.

Keywords: amorphous silicon microstructure hydrogen bonding configurations interface state density

Received: 27 October 2016
Revised: 12 December 2016
Accepted manuscript online:

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	88.40.jj	(Silicon solar cells)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51361022 and 61574072) and the Postdoctoral Science Foundation of Jiangxi Province, China (Grant No. 2015KY12).

Corresponding Authors: Lang Zhou
E-mail: lzhou@ncu.edu.cn

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You-Peng Xiao(肖友鹏), Xiu-Qin Wei(魏秀琴), Lang Zhou(周浪) Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell 2017 Chin. Phys. B 26 048104

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Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell

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