| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of PECVD SiNx/SiOyNx-Si interface property on surface passivation of silicon wafer |
| Xiao-Jie Jia(贾晓洁)1, Chun-Lan Zhou(周春兰)1, Jun-Jie Zhu(朱俊杰)2, Su Zhou(周肃)1, Wen-Jing Wang(王文静)1 |
1. The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
2. Solar Energy Department, Institute for Energy Technology, Instituttveien 18, 2007 Kjeller, Norway |
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Abstract It is studied in this paper that the electrical characteristics of the interface between SiOyNx/SiNx stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiOyNx layer on interface parameters, such as interface state density Dit and fixed charge Qf, and the surface passivation quality of silicon are observed. Capacitance-voltage measurements reveal that inserting a thin SiOyNx layer between the SiNx and the silicon wafer can suppress Qf in the film and Dit at the interface. The positive Qf and Dit and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiOyNx film increasing. Prepared by deposition at a low temperature and a low ratio of N2O/SiH4 flow rate, the SiOyNx/SiNx stacks result in a low effective surface recombination velocity (Seff) of 6 cm/s on a p-type 1 Ω·cm-5 Ω·cm FZ silicon wafer. The positive relationship between Seff and Dit suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it.
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Received: 26 July 2016
Revised: 31 August 2016
Accepted manuscript online:
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PACS:
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73.20.At
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(Surface states, band structure, electron density of states)
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81.65.Rv
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(Passivation)
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| Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA050302) and the National Natural Science Foundation of China (Grant No. 61306076). |
Corresponding Authors:
Chun-Lan Zhou
E-mail: zhouchl@mail.iee.ac.cn
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Cite this article:
Xiao-Jie Jia(贾晓洁), Chun-Lan Zhou(周春兰), Jun-Jie Zhu(朱俊杰), Su Zhou(周肃), Wen-Jing Wang(王文静) Effect of PECVD SiNx/SiOyNx-Si interface property on surface passivation of silicon wafer 2016 Chin. Phys. B 25 127301
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