Analytical threshold voltage model for strained silicon GAA-TFET

doi:10.1088/1674-1056/25/11/118501

Abstract Tunnel field effect transistors (TFETs) are promising devices for low power applications. An analytical threshold voltage model, based on the channel surface potential and electric field obtained by solving the 2D Poisson's equation, for strained silicon gate all around TFETs is proposed. The variation of the threshold voltage with device parameters, such as the strain (Ge mole fraction x), gate oxide thickness, gate oxide permittivity, and channel length has also been investigated. The threshold voltage model is extracted using the peak transconductance method and is verified by good agreement with the results obtained from the TCAD simulation.

Keywords: tunnel field effect transistor threshold voltage strained silicon

Received: 15 April 2016
Revised: 24 July 2016
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	71.20.Nr	(Semiconductor compounds)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61474085).

Corresponding Authors: Hai-Yan Kang
E-mail: Kanghaiyan5200@163.com

Cite this article:

Hai-Yan Kang(康海燕), Hui-Yong Hu(胡辉勇), Bin Wang(王斌) Analytical threshold voltage model for strained silicon GAA-TFET 2016 Chin. Phys. B 25 118501

[1]	Saramekala G K, Dubey S and Tiwari P K 2015 Chin. Phys. B 24 108505
[2]	Kumar S and Raj B 2015 J. Comput. Electron. 14 820
[3]	Chander S and Baishya S 2015 IEEE Electr. Dev. Lett. 36 714
[4]	Arun Samuel T S, Balamurugan N B, Niranjana T and Samyuktha B 2014 J. Electr. Eng. Technol. 9 655
[5]	Hähnel D, Fischer I, Isemann H, Oehme M and Schulze J 2012 International Silicon-Germanium Technology and Device Meeting, June 4-6, 2012, Berkeley, p. 112
[6]	Brinda B, Srimanta B and Rajsekhar K 2011 Annual IEEE India Conference, December 16-18, 2011, Hyderabad, p. 4
[7]	Luong G V, Trellenkamp S, Zhao Q T and Mantl S 2015 Joint International EUROSOI Workshop and International Conference, January 26-28, 2015, Bologna, p. 65
[8]	Zhang J, Hu H Y and Yang M Y 2015 Acta Phys. Sin. 64 238502(in Chinese)
[9]	Cui N, Liang R R, Wang J and Xu J 2012 International Silicon-Germanium Technology and Device Meeting, June 4-6, 2012, Berkeley, p. 2
[10]	Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X and Shu B 2010 Chin. Phys. B 19 117309
[11]	Lee M, Jeon Y, Jung J C, Koo S M and Kim S 2012 Appl. Phys. Lett. 100 253506
[12]	Dash S and Mishra G P 2015 Superlattices Microstruct. 86 211
[13]	Li Y C, Zhang H M, Zhang Y M, Hu H Y, Wang B, Lou Y L and Zhou C Y 2013 Chin. Phys. B 22 038501
[14]	Liu Y, He J, Chan W X, Du C X, Ye Y, Zhao W, Wu W, Deng W L and Wang W P 2014 Chin. Phys. B 23 097102
[15]	Boucart K and Ionescu A M 2007 Proceedings of the 37$th European Solid-State Device Research Conference, September 11-13, 2007, Germany, p. 299

[1]	Design and research of normally-off β-Ga₂O₃/4H-SiC heterojunction field effect transistor Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需). Chin. Phys. B, 2023, 32(3): 037302.
[2]	Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices Guangbao Lu(陆广宝), Jun Liu(刘俊), Chuanguo Zhang(张传国), Yang Gao(高扬), and Yonggang Li(李永钢). Chin. Phys. B, 2023, 32(1): 018506.
[3]	Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs Chen Wang(王琛), Wenmo Lu(路文墨), Fengnan Li(李奉南), Qiaomei Luo(罗巧梅), and Fei Ma(马飞)^†. Chin. Phys. B, 2022, 31(9): 096101.
[4]	Combined effects of cycling endurance and total ionizing dose on floating gate memory cells Si-De Song(宋思德), Guo-Zhu Liu(刘国柱), Qi He(贺琪), Xiang Gu(顾祥), Gen-Shen Hong(洪根深), and Jian-Wei Wu(吴建伟). Chin. Phys. B, 2022, 31(5): 056107.
[5]	DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate Zi-Xin Chen(陈子馨), Wei-Jing Liu(刘伟景), Jiang-Nan Liu(刘江南), Qiu-Hui Wang(王秋蕙), Xu-Guo Zhang(章徐国), Jie Xu(许洁), Qing-Hua Li(李清华), Wei Bai(白伟), and Xiao-Dong Tang(唐晓东). Chin. Phys. B, 2022, 31(5): 058501.
[6]	Study on a novel vertical enhancement-mode Ga₂O₃ MOSFET with FINFET structure Liangliang Guo(郭亮良), Yuming Zhang(张玉明), Suzhen Luan(栾苏珍), Rundi Qiao(乔润迪), and Renxu Jia(贾仁需). Chin. Phys. B, 2022, 31(1): 017304.
[7]	Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure Ruo-Han Li(李若晗), Wu-Xiong Fei(费武雄), Rui Tang(唐锐), Zhao-Xi Wu(吴照玺), Chao Duan(段超), Tao Zhang(张涛), Dan Zhu(朱丹), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Chin. Phys. B, 2021, 30(8): 087305.
[8]	Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor Si-De Song(宋思德), Su-Zhen Wu(吴素贞), Guo-Zhu Liu(刘国柱), Wei Zhao(赵伟), Yin-Quan Wang(王印权), Jian-Wei Wu(吴建伟), and Qi He(贺琪). Chin. Phys. B, 2021, 30(4): 047103.
[9]	Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波). Chin. Phys. B, 2021, 30(4): 048504.
[10]	Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Yi-Lin Chen(陈怡霖), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Mei Wu(武玫), Ling Yang(杨凌), Yue Hao(郝跃). Chin. Phys. B, 2020, 29(4): 047304.
[11]	Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis Hui-Fang Xu(许会芳)†, Xin-Feng Han(韩新风), and Wen Sun(孙雯). Chin. Phys. B, 2020, 29(10): 108502.
[12]	Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors Dong Zhang(张东), Chenfei Wu(武辰飞), Weizong Xu(徐尉宗), Fangfang Ren(任芳芳), Dong Zhou(周东), Peng Yu(于芃), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海). Chin. Phys. B, 2019, 28(1): 017303.
[13]	High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). Chin. Phys. B, 2019, 28(1): 018102.
[14]	Characteristics and threshold voltage model of GaN-based FinFET with recessed gate Chong Wang(王冲), Xin Wang(王鑫), Xue-Feng Zheng(郑雪峰), Yun Wang(王允), Yun-Long He(何云龙), Ye Tian(田野), Qing He(何晴), Ji Wu(吴忌), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). Chin. Phys. B, 2018, 27(9): 097308.
[15]	Double-gate-all-around tunnel field-effect transistor Wen-Hao Zhang(张文豪), Zun-Chao Li(李尊朝), Yun-He Guan(关云鹤), Ye-Fei Zhang(张也非). Chin. Phys. B, 2017, 26(7): 078502.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Analytical threshold voltage model for strained silicon GAA-TFET

Cite this article:

Online attention