Influence of nitrogen and magnesium doping on the properties of ZnO films

doi:10.1088/1674-1056/25/7/076105

Abstract Undoped ZnO and doped ZnO films were deposited on the MgO(111) substrates using oxygen plasma-assisted molecular beam expitaxy. The orientations of the grown ZnO thin film were investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). The film roughness was measured by atomic force microscopy, which was correlated with the grain sizes determined by XRD. Synchrotron-based x-ray absorption spectroscopy was performed to study the doping effect on the electronic properties of the ZnO films, compared with density functional theory calculations. It is found that, nitrogen doping would hinder the growth of thin film, and generate the N_O defect, while magnesium doping promotes the quality of nitrogen-doped ZnO films, inhibiting (N₂)_O production and increasing nitrogen content.

Keywords: ZnO nitrogen magnesium x-ray absorption spectra

Received: 28 December 2015
Revised: 02 March 2016
Accepted manuscript online:

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	61.05.cj	(X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.)
	61.05.js	(X-ray photoelectron diffraction)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11204253, U1332105, 61227009, and 91321102), the Fundamental Research Funds for Central Universities, China (Grant No. 20720160020), and the National High Technology Research and Development Program of China (Grant No. 2014AA052202).

Corresponding Authors: Hui-Qiong Wang
E-mail: hqwang@xmu.edu.cn

Cite this article:

Dong-hua Li(李东华), Hui-Qiong Wang(王惠琼), Hua Zhou(周华), Ya-Ping Li(李亚平), Zheng Huang(黄政), Jin-Cheng Zheng(郑金成), Jia-Ou Wang(王嘉鸥), Hai-jie Qian(钱海杰), Kurash Ibrahim(奎热西), Xiaohang Chen(陈晓航), Huahan Zhan(詹华瀚), Yinghui Zhou(周颖慧), Junyong Kang(康俊勇) Influence of nitrogen and magnesium doping on the properties of ZnO films 2016 Chin. Phys. B 25 076105

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