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Chin. Phys. B, 2016, Vol. 25(3): 038501    DOI: 10.1088/1674-1056/25/3/038501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors

Yan-Xiao Zhao(赵彦晓), Wan-Rong Zhang(张万荣), Xin Huang(黄鑫), Hong-Yun Xie(谢红云), Dong-Yue Jin(金冬月), Qiang Fu(付强)
School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
Abstract  The effect of lateral structure parameters of transistors including emitter width, emitter length, and emitter stripe number on the performance parameters of the active inductor (AI), such as the effective inductance Ls, quality factor Q, and self-resonant frequency ω 0 is analyzed based on 0.35-μm SiGe BiCMOS process. The simulation results show that for AI operated under fixed current density JC, the HBT lateral structure parameters have significant effect on Ls but little influence on Q and ω 0, and the larger Ls can be realized by the narrow, short emitter stripe and few emitter stripes of SiGe HBTs. On the other hand, for AI with fixed HBT size, smaller JC is beneficial for AI to obtain larger Ls, but with a cost of smaller Q and ω 0. In addition, under the fixed collector current IC, the larger the size of HBT is, the larger Ls becomes, but the smaller Q and ω 0 become. The obtained results provide a reference for selecting geometry of transistors and operational condition in the design of active inductors.
Keywords:  SiGe HBT      lateral structure parameters      active inductor  
Received:  10 October 2015      Revised:  08 November 2015      Published:  05 March 2016
PACS:  85.30.-z (Semiconductor devices)  
  85.30.Pq (Bipolar transistors)  
  85.40.Qx (Microcircuit quality, noise, performance, and failure analysis)  
  84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))  
Fund: Project supported by the Natural Science Foundation of Beijing, China (Grant Nos. 4142007 and 4122014), the National Natural Science Foundation of China (Grant No. 61574010), and the Higher Educational Science and Technology Program of Shandong Province, China (Grant No. J13LN09).
Corresponding Authors:  Wan-Rong Zhang     E-mail:  wrzhang@bjut.edu.cn

Cite this article: 

Yan-Xiao Zhao(赵彦晓), Wan-Rong Zhang(张万荣), Xin Huang(黄鑫), Hong-Yun Xie(谢红云), Dong-Yue Jin(金冬月), Qiang Fu(付强) Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors 2016 Chin. Phys. B 25 038501

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