Mobility enhancement of strained GaSb p-channel metal—oxide—semiconductor field-effect transistorswith biaxial compressive strain

doi:10.1088/1674-1056/25/3/038504

Abstract Various biaxial compressive strained GaSb p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are experimentally and theoretically investigated. The biaxial compressive strained GaSb MOSFETs show a high peak mobility of 638 cm²/V·s, which is 3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain. Meanwhile, first principles calculations show that the hole effective mass of GaSb depends on the biaxial compressive strain. The biaxial compressive strain brings a remarkable enhancement of the hole mobility caused by a significant reduction in the hole effective mass due to the modulation of the valence bands.

Keywords: GaSb metal-oxide-semiconductor field-effect transistor strain first principles calculations

Received: 19 October 2015
Revised: 09 November 2015
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	81.05.Ea	(III-V semiconductors)
	77.55.dj	(For nonsilicon electronics (Ge, III-V, II-VI, organic electronics))
	71.15.Mb	(Density functional theory, local density approximation, gradient and other corrections)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00602) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-002).

Corresponding Authors: Jun Xu
E-mail: junxu@tsinghua.edu.cn

Cite this article:

Yan-Wen Chen(陈燕文), Zhen Tan(谭桢), Lian-Feng Zhao(赵连锋), Jing Wang(王敬), Yi-Zhou Liu(刘易周),Chen Si(司晨), Fang Yuan(袁方), Wen-Hui Duan(段文晖), Jun Xu(许军) Mobility enhancement of strained GaSb p-channel metal—oxide—semiconductor field-effect transistorswith biaxial compressive strain 2016 Chin. Phys. B 25 038504

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Mobility enhancement of strained GaSb p-channel metal—oxide—semiconductor field-effect transistorswith biaxial compressive strain

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