| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance |
| Yu-Ru Wang(王裕如)1, Yi-He Liu(刘祎鹤)1, Zhao-Jiang Lin(林兆江)1, Dong Fang(方冬)1, Cheng-Zhou Li(李成州)1, Ming Qiao(乔明)1,2, Bo Zhang(张波)1 |
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
2. Institute of Electronic and Information Engineering in Dongguan, UESTC, Dongguan 523808, China |
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Abstract An analytical model for a novel triple reduced surface field (RESURF) silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) field effect transistor with n-type top (N-top) layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional (2D) Poisson's equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage (BV) is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer (Qntop) is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results, showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.
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Received: 06 September 2015
Revised: 22 October 2015
Accepted manuscript online:
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PACS:
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.40.Ty
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(Semiconductor-insulator-semiconductor structures)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61376080), the Natural Science Foundation of Guangdong Province, China (Grant No. 2014A030313736), and the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2013J030). |
Corresponding Authors:
Ming Qiao
E-mail: qiaoming@uestc.edu.cn
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Cite this article:
Yu-Ru Wang(王裕如), Yi-He Liu(刘祎鹤), Zhao-Jiang Lin(林兆江), Dong Fang(方冬), Cheng-Zhou Li(李成州), Ming Qiao(乔明), Bo Zhang(张波) Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance 2016 Chin. Phys. B 25 027305
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| [1] |
Qiao M, Zhuang X, Wu L J, Zhang W T, Wen H J, Zhang B and Li Z J 2012 Chin. Phys. B 21 108502
|
| [2] |
Luo X R, Yao G L, Chen X, Wang Q, Ge R and Udreab F 2011 Chin. Phys. B 20 028501
|
| [3] |
Wang Y G, Luo X R, Ge R, Wu L J, Chen X, Yao G L, Lei T F, Wang Q, Fan J and Hu X R 2011 Chin. Phys. B 20 077304
|
| [4] |
Zhang J, He J, Zhou X Y, Zhang L N, Ma Y T, Chen Q, Zhang X K, Yang Z, Wang R F, Han Y and Chan M 2012 Chin. Phys. B 21 047303
|
| [5] |
Wang Z G, Zhang B, Fu Q, Xie G and Li Z J 2012 IEEE Electron Dev. Lett. 33 703
|
| [6] |
Qiao M, Zhou X, He Y T, Wen H J, Zhao Y Y, Zhang B and Li Z J 2012 IEEE Electron Dev. Lett. 33 1438
|
| [7] |
Zhao Y Y, Qiao M, Wang W B, Wang M and Zhang B 2012 Chin. Phys. B 21 018501
|
| [8] |
Zhang J, Guo Y F, Xu F, Lin H, Yang H, Hong Y and Yao J F 2015 Chin. Phys. B 24 028502
|
| [9] |
Hossain Z, Imam M, Fulton J and Tanaka M 2002 14th International Symposium on Power Semiconductor Devices and ICs, June 4-7, 2002, Santa Fe, USA, pp. 137-140
|
| [10] |
Qiao M, Jiang L L, Zhang B and Li Z J 2012 J. Semicond. 33 044004
|
| [11] |
Qiao M, Zhang B, Li Z J, Fang J and Zhou X D 2007 Acta Phys. Sin. 56 3990 (in Chinese)
|
| [12] |
Zhang J, Guo Y F, Xu Y, Lin H, Yang H, Hong Y and Yao J F 2015 Chin. Phys. B 24 028502
|
| [13] |
Zhang W T, Wu L J, Qiao M, Luo X R, Zhang B and Li Z J 2012 Chin. Phys. B 21 077101
|
| [14] |
Luo X R, Yao G L, Zhang Z Y, Jiang Y H, Zhou K, Wang P, Wang Y G, Lei T F, Zhang Y X and Wei J 2012 Chin. Phys. B 21 068501
|
| [15] |
Wang Z, Lu M T, Zhou X, Wang J and Zhang B 2014 Electron Devices and Solid-State Circuits, June 18-20, 2014, Chengdu, China, pp. 1-2
|
| [16] |
Disney D R, Paul A K, Darwish M, Basecki R and Rumennik V 2001 13th International Symposium on Power Semiconductor Devices and ICs, June 2-7, 2001, Osaka, Japan, pp. 399-402
|
| [17] |
Lee S H, Jeon C K, Moon J W and Choi Y C 2008 20th International Symposium on Power Semiconductor Devices and ICs, May 18-22, 2008, Oralando, USA, pp. 141-144
|
| [18] |
Su R Y, Yang F J, Tsay J L, Cheng C C, Liou R S and Tuan H C 2010 Electron Devices Meeting, December 6-8, 2010, San Francisco, USA, pp. 20.8.1-20.8.4
|
| [19] |
Mao K, Qiao M, Jiang L L, Jiang H P, Li Z H, Chen W Z, Li Z J and Zhang B 2013 25th International Symposium on Power Semiconductor Devices and ICs, May 26-30, 2013, Kanazawa, Japan, pp. 397-400
|
| [20] |
Qiao M, Li Y F, Zhou X, Li Z J and Zhang B 2014 IEEE Electron Dev. Lett. 35 774
|
| [21] |
Qiao M, Wang Y R, and Zhou X, Jin F, Wang H H, Wang Z, Li Z J and Zhang B 2015 IEEE Trans. Electron. Dev. 62 2933
|
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