Please wait a minute...
Chin. Phys. B, 2015, Vol. 24(10): 108504    DOI: 10.1088/1674-1056/24/10/108504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

Wu Shao-Hang (吴绍航)a b, Zhang Nan (张楠)a, Hu Yong-Sheng (胡永生)a, Chen Hong (陈红)c, Jiang Da-Peng (蒋大鹏)a, Liu Xing-Yuan (刘星元)a
a State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, Changchun 130033, China;
b University of Chinese Academy of Sciences, Beijing 100049, China;
c Key Laboratory of Optical System Advanced Manufacturing Technology, Chinese Academy of Sciences, Changchun 130033, China
Abstract  Strontium-zinc-oxide (SrZnO) films forming the semiconductor layers of thin-film transistors (TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide (ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.
Keywords:  thin-film transistor      ZnO      electron beam evaporation  
Received:  08 March 2015      Revised:  20 April 2015      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  71.55.Gs (II-VI semiconductors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 6140031454) and the Innovation Program of Chinese Academy of Sciences and State Key Laboratory of Luminescence and Applications.
Corresponding Authors:  Liu Xing-Yuan     E-mail:  liuxy@ciomp.ac.cn

Cite this article: 

Wu Shao-Hang (吴绍航), Zhang Nan (张楠), Hu Yong-Sheng (胡永生), Chen Hong (陈红), Jiang Da-Peng (蒋大鹏), Liu Xing-Yuan (刘星元) Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors 2015 Chin. Phys. B 24 108504

[1] Hoffman R L, Norris B J and Wager J F 2003 Appl. Phys. Lett. 82 733
[2] Nomura K, Ohta H, Ueda K, Kamiya T, Hirano M and Hosono H 2003 Science 300 1269
[3] Wager J F 2003 Science 300 1245
[4] Kwon Y, Li Y, Heo Y W, Jones M, Holloway P H, Norton D P, Park Z V and Li S 2004 Appl. Phys. Lett. 84 2685
[5] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488
[6] Hamberg I and Granqvist C G 1986 J. Appl. Phys. 60 R123
[7] Tang C W and VanSlyke S A 1987 Appl. Phys. Lett. 51 913
[8] Lewis B G and Paine D C 2000 Mrs. Bull. 25 22
[9] Fortunato E M, Barquinha P M, Pimentel A, Goncälves A M, Marques A J, Pereira L M and Martins R F 2005 Adv. Mater. 17 590
[10] Liu Y R, Su J, Lai P T and Yao R H 2014 Chin. Phys. B 23 068501
[11] Gao Y N, Li X F and Zhang J H 2014 Acta Phys. Sin. 63 118502 (in Chinese)
[12] Park J S, Kim K, Park Y G, Mo Y G, Kim H D and Jeong J K 2009 Adv. Mater. 21 329
[13] Kim D N, Kim D L, Kim G H, Kim S J, Rim Y S, Jeong W H and Kim H J 2010 Appl. Phys. Lett. 97 192105
[14] Esro M, Vourlias G, Somerton C, Milne W I and Adamopoulos G 2015 Adv. Funct. Mater. 25 134
[15] Funabiki F, Kamiya T and Hosono H 2012 J. Ceram. Soc. Jpn. 120 447
[16] Lide D R 2010 CRC handbook of chemistry and physics (Boca Raton: CRC Press) pp. 9-65
[17] Xiong K, Robertson J and Clark S J 2007 J. Appl. Phys. 102 083710
[18] Walsh A, Da Silva J L, Wei S H, Körber C, Klein A, Piper L, DeMasi A, Smith K E, Panaccione G and Torelli P 2008 Phys. Rev. Lett. 100 167402
[19] Srikant V and Clarke D R 1998 J. Appl. Phys. 83 5447
[20] Fortunato E, Barquinha P and Martins R 2012 Adv. Mater. 24 2945
[21] Lo C C and Hsieh T E 2012 Ceram. Int. 38 3977
[22] Vygranenko Y, Wang K, Vieira M and Nathan A 2008 Phys. Status Solidi 205 1925
[23] Wang N, Liu X X and Liu X Y 2010 Adv. Mater. 22 2211
[24] Wu S, Li Y, Luo J, Lin J, Fan Y, Gan Z and Liu X 2014 Opt. Express 22 4731
[25] Liao Y, Lu Q, Fan Y and Liu X 2011 Appl. Phys. Lett. 99 023302
[26] Parhizkar M, Kumar N, Nayak P K, Singh S, Talwar S S, Major S S and Srinivasa R S 2005 Colloids and Surfaces A: Physicochemical and Engineering Aspects 257-258 445
[27] Srivastava A K, Deepa M, Bahadur N and Goyat M S 2009 Mater. Chem. Phys. 114 194
[28] Gao Y, Nagai M, Chang T C and Shyue J J 2007 Crystal Growth and Design 7 2467
[29] Pradhan D and Leung K J 2008 Phys. Chem. C 112 1357
[30] Kamiya T and Hosono H 2013 International Conference on Semiconductor Technology for ULSIC Vs. TFT 54 103
[31] Lee C G and Ananth D 2010 Appl. Phys. Lett. 96 243501
[1] Spectral shift of solid high-order harmonics from different channels in a combined laser field
Dong-Dong Cao(曹冬冬), Xue-Fei Pan(潘雪飞), Jun Zhang(张军), and Xue-Shen Liu(刘学深). Chin. Phys. B, 2023, 32(3): 034204.
[2] High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack
Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). Chin. Phys. B, 2023, 32(1): 018503.
[3] High-quality CdS quantum dots sensitized ZnO nanotube array films for superior photoelectrochemical performance
Qian-Qian Gong(宫倩倩), Yun-Long Zhao(赵云龙), Qi Zhang(张奇), Chun-Yong Hu(胡春永), Teng-Fei Liu(刘腾飞), Hai-Feng Zhang(张海峰), Guang-Chao Yin(尹广超), and Mei-Ling Sun(孙美玲). Chin. Phys. B, 2022, 31(9): 098103.
[4] Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases
Tianyuan Song(宋天源), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Qi Shan(单奇). Chin. Phys. B, 2022, 31(8): 088101.
[5] Emerging of Ag particles on ZnO nanowire arrays for blue-ray hologram storage
Ning Li(李宁), Xin Li(李鑫), Ming-Yue Zhang(张明越), Jing-Ying Miao(苗景迎), Shen-Cheng Fu(付申成), and Xin-Tong Zhang(张昕彤). Chin. Phys. B, 2022, 31(3): 036101.
[6] Degradation mechanisms for polycrystalline silicon thin-film transistors with a grain boundary in the channel under negative gate bias stress
Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生). Chin. Phys. B, 2022, 31(12): 128105.
[7] Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier
Yinzhe Liu(刘寅哲), Kewei Liu(刘可为), Jialin Yang(杨佳霖), Zhen Cheng(程祯), Dongyang Han(韩冬阳), Qiu Ai(艾秋), Xing Chen(陈星), Yongxue Zhu(朱勇学), Binghui Li(李炳辉), Lei Liu(刘雷), and Dezhen Shen(申德振). Chin. Phys. B, 2022, 31(10): 106101.
[8] Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology
Chi Sun(孙驰), Linyuan Zhao(赵林媛), Tingting Hao(郝婷婷), Renrong Liang(梁仁荣), Haitao Ye(叶海涛), Junjie Li(李俊杰), and Changzhi Gu(顾长志). Chin. Phys. B, 2022, 31(1): 016801.
[9] Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films
Qing-Fen Jiang(姜清芬), Jie Lian(连洁), Min-Ju Ying(英敏菊), Ming-Yang Wei(魏铭洋), Chen-Lin Wang(王宸琳), and Yu Zhang(张裕). Chin. Phys. B, 2021, 30(9): 097801.
[10] Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector
Hongyu Ma(马宏宇), Kewei Liu(刘可为), Zhen Cheng(程祯), Zhiyao Zheng(郑智遥), Yinzhe Liu(刘寅哲), Peixuan Zhang(张培宣), Xing Chen(陈星), Deming Liu(刘德明), Lei Liu(刘雷), and Dezhen Shen(申德振). Chin. Phys. B, 2021, 30(8): 087303.
[11] Fe-doped ZnS film fabricated by electron beam evaporation and its application as saturable absorber for Er:ZBLAN fiber laser
Jiu-Lin Yang(杨久林), Guo-Ying Feng(冯国英), Du-Xin Qing(卿杜鑫), Ya-Jie Wu(吴雅婕), Yun Luo(罗韵), and Jian-Jun Wang(王建军). Chin. Phys. B, 2021, 30(7): 074207.
[12] Improved efficiency and stability of perovskite solar cells with molecular ameliorating of ZnO nanorod/perovskite interface and Mg-doping ZnO
Zhenyun Zhang(张振雲), Lei Xu(许磊), and Junjie Qi(齐俊杰). Chin. Phys. B, 2021, 30(3): 038801.
[13] In-situ fabrication of ZnO nanoparticles sensors based on gas-sensing electrode for ppb-level H2S detection at room temperature
Jing-Yue Xuan(宣景悦), Guo-Dong Zhao(赵国栋), Xiao-Bo Shi(史小波), Wei Geng(耿伟), Heng-Zheng Li(李恒征), Mei-Ling Sun(孙美玲), Fu-Chao Jia(贾福超), Shu-Gang Tan(谭树刚), Guang-Chao Yin(尹广超), and Bo Liu(刘波). Chin. Phys. B, 2021, 30(2): 020701.
[14] Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress
Jianing Guo(郭佳宁), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生). Chin. Phys. B, 2021, 30(11): 118102.
[15] Utilizing of high-pressure high-temperature synthesis to enhance the thermoelectric properties of Zn0.98Al0.02O with excellent electrical properties
Qi Chen(陈启), Xinjian Li(李欣健), Yao Wang(王遥), Lijie Chang(常立杰), Jian Wang(王健), Yuewen Zhang(张跃文), Hongan Ma(马红安), and Xiaopeng Jia(贾晓鹏). Chin. Phys. B, 2021, 30(1): 016202.
No Suggested Reading articles found!