Charge trapping behavior and its origin in Al2O3/SiC MIS system

doi:10.1088/1674-1056/24/8/087304

Abstract

Charge trapping behavior and its origin in Al₂O₃/SiC MOS structure are investigated by analyzing the capacitance–voltage (C–V) hysteresis and the chemical composition of the interface. The C–V hysteresis is measured as a function of oxide thickness series for an Al₂O₃/SiC MIS capacitor. The distribution of the trapped charges, extracted from the C–V curves, is found to mainly follow a sheet charge model rather than a bulk charge model. Therefore, the electron injection phenomenon is evaluated by using linear fitting. It is found that most of the trapped charges are not distributed exactly at the interface but are located in the bulk of the Al₂O₃ layers, especially close to the border. Furthermore, there is no detectable oxide interface layer in the x-ray photoelectron spectroscope (XPS) and transmission electron microscope (TEM) measurements. In addition, Rutherford back scattering (RBS) analysis shows that the width of the Al₂O₃/SiC interface is less than 1 nm. It could be concluded that the charge trapping sites in Al₂O₃/SiC structure might mainly originate from the border traps in Al₂O₃ film rather than the interface traps in the interfacial transition layer.

Keywords: Al₂O₃ SiC charge trapping sites interface

Received: 08 December 2014
Revised: 10 April 2015
Accepted manuscript online:

PACS:	73.40.Rw	(Metal-insulator-metal structures)
	77.55.D-
	73.20.-r	(Electron states at surfaces and interfaces)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 61106080) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2013ZX02305).

Corresponding Authors: Shen Hua-Jun
E-mail: shenhuajun@ime.ac.cn

Cite this article:

Liu Xin-Yu (刘新宇), Wang Yi-Yu (王弋宇), Peng Zhao-Yang (彭朝阳), Li Cheng-Zhan (李诚瞻), Wu Jia (吴佳), Bai Yun (白云), Tang Yi-Dan (汤益丹), Liu Ke-An (刘可安), Shen Hua-Jun (申华军) Charge trapping behavior and its origin in Al₂O₃/SiC MIS system 2015 Chin. Phys. B 24 087304

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Charge trapping behavior and its origin in Al2O3/SiC MIS system

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Charge trapping behavior and its origin in Al₂O₃/SiC MIS system