Please wait a minute...
Chin. Phys. B, 2015, Vol. 24(6): 068104    DOI: 10.1088/1674-1056/24/6/068104
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Modeling the reactive sputter deposition of Ti-doped VOx thin films

Wang Tao (王涛)a, Yu He (于贺)a, Gu De-En (顾德恩)a, Guo Rui (郭睿)a, Dong Xiang (董翔)a, Jiang Ya-Dong (蒋亚东)a, Hu Rui-Lin (胡锐麟)b
a School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
b Center for Plasma Material Interaction, Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL, 61801, USA
Abstract  In this paper an original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of Ti-doped VOx deposited with changing oxygen flow during reactive sputtering deposition. Ti-doped VOx thin films are deposited using a V target with Ti inserts. The effects of titanium inserts on the discharge voltage, deposition rate, and the ratio of V/Ti are investigated. By doping titanium in the vanadium target, the average sputtering yield decreases. In this case, the sputter erosion reduces, which is accompanied by a reduction in the deposition rate. The ratio between V content and Ti content in the film is measured using energy-dispersive x-ray spectroscopy (EDX). A decrease in the vanadium concentration with the increasing of the oxygen flow rate is detected using EDX. Results show a reasonable agreement between numerical and experimental data.
Keywords:  Ti-doped      VOx      EDX  
Received:  22 October 2014      Revised:  18 December 2014      Accepted manuscript online: 
PACS:  81.15.Cd (Deposition by sputtering)  
  85.40.Sz (Deposition technology)  
Fund: Project partially supported by the National Natural Science Foundation of China (Grant Nos. 61405027, 61421002, and 61235006) and the Postdoctoral Science Foundation of China (Grant No. 2014M562296).
Corresponding Authors:  Yu He     E-mail:  yuhe@uestc.edu.cn
About author:  81.15.Cd; 85.40.Sz

Cite this article: 

Wang Tao (王涛), Yu He (于贺), Gu De-En (顾德恩), Guo Rui (郭睿), Dong Xiang (董翔), Jiang Ya-Dong (蒋亚东), Hu Rui-Lin (胡锐麟) Modeling the reactive sputter deposition of Ti-doped VOx thin films 2015 Chin. Phys. B 24 068104

[1] Kucharczyk D and Niklewski T 1979 J. Appl. Cryst. 12 370
[2] Wei X B, Wu Z M, Xu X D, Wang T, Tang J J, Li W Z and Jiang Y D 2008 J. Phys. D: Appl. Phys. 41 055303
[3] Schlag H J and Scherber W 2000 Thin Solid Films 366 28
[4] Berg S and Nyberg T 2005 Thin Solid Films 476 215
[5] Jonsson B L, Nyberg T and Berg S 2012 Surf. Coat. Tech. 206 3666
[7] Depla D, Heirwegh S, Mahieu S, Haemers J and Gryse D R 2007 J. Appl. Phys. 101 013301
[8] Sarhammar E, Strijckmans K, Nyberg T, Steenberge S, Berg S and Depla D 2013 Surf. Coat. Tech. 232 357
[9] Kubart T, Depla D, Martin M D, Nyberg T and Berg S 2008 Appl. Phys. Lett. 92 221501
[10] Martin N and Rousselot C 1999 Surf. Coat. Tech. 114 235
[11] Chae G B, Kim T H and Yun J S 2008 Electrochem. Solid ST 11 53
[12] Soltani M, Chaker M, Haddad E, Kruzelecky V R and Margot J 2004 Appl. Phys. Lett. 85 1958
[13] Wang T, Yu H, Dong X, Jiang Y D, Chen C and Wu Y L 2014 Chin. Phys. B 23 088113
[14] Wang T, Jiang Y D, Yu H, Wu Z M and Zhao H N 2011 Chin. Phys. B 20 038101
[15] Ziegler F J, Biersack P J and Ziegler D M 2006 SRIM Ziegler Scientific Company
[16] Luo Z F, Wu Z M, Wang T, Xu X D, Li W and Jiang Y D 2012 J. Phys. Chem. Sol. 73 1122
[17] Yu H, Jiang Y D, Wang T, Wu Z M, Yu J S and Wei X B 2010 J. Vac. Sci. Technol. A 28 466
[1] Density functional theory study of the interaction of H2 with pure and Ti-doped WO3 (002) surfaces
Hu Ming(胡明), Wang Wei-Dan(王巍丹), Zeng Peng(曾鹏), Zeng Jing(曾晶), and Qin Yu-Xiang(秦玉香) . Chin. Phys. B, 2012, 21(2): 023101.
No Suggested Reading articles found!