Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates

doi:10.1088/1674-1056/24/5/057801

Abstract In this paper, we investigate the effect of pressure on the growth mode of high quality (10-11) GaN using an epitaxial lateral over growth (ELO) technique by metal organic chemical vapor deposition (MOCVD). Two pressure growth conditions, high pressure (HP) 1013 mbar and low pressure growth (LP) 500 mbar, are employed during growth. In the high pressure growth conditions, the crystal quality is improved by decreasing the dislocation and stack fault density in the strip connection locations. The room temperature photoluminescence measurement also shows that the light emission intensity increases three times using the HP growth condition compared with that using the LP growth conditions. In the low temperature (77 K) photoluminescence, the defects-related peaks are very obvious in the low pressure growth samples. This result also indicates that the crystal quality is improved using the high pressure growth conditions.

Keywords: semipolar pressure metal-organic chemical vapor deposition

Received: 09 November 2014
Revised: 18 December 2014
Accepted manuscript online:

PACS:	78.55.-m	(Photoluminescence, properties and materials)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project support by the National High Technology Research and Development Program of China (Green Laser).

Corresponding Authors: Liu Jian-Ming
E-mail: liujianming@sanan-e.com

About author: 78.55.-m; 78.30.Fs

Cite this article:

Liu Jian-Ming (刘建明), Zhang Jie (张洁), Lin Wen-Yu (林文禹), Ye Meng-Xin (叶孟欣), Feng Xiang-Xu (冯向旭), Zhang Dong-Yan (张东炎), Steve Ding, Xu Chen-Ke (徐宸科), Liu Bao-Lin (刘宝林) Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates 2015 Chin. Phys. B 24 057801

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Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates

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