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Chin. Phys. B, 2015, Vol. 24(4): 048503    DOI: 10.1088/1674-1056/24/4/048503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

Zhou Xing-Ye, Feng Zhi-Hong, Wang Yuan-Gang, Gu Guo-Dong, Song Xu-Bo, Cai Shu-Jun
National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Abstract  In this paper, two-dimensional (2D) transient simulations of an AlGaN/GaN high-electron-mobility transistor (HEMT) are carried out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases are obtained, and the pulsed current-voltage (I-V) curves are extracted from the transients. The experimental results of both gate-lag transient current and pulsed I-V curves are reproduced by the simulation, and the current collapse due to the trapping effect is explained from the view of physics based on the simulation results. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of AlGaN/GaN HEMTs besides surface traps and that the thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is meaningful in analyzing the mechanism of dynamic current collapse, and the work in this paper will benefit the reliability study and model development of GaN-based devices.
Keywords:  transient simulation      AlGaN/GaN HEMT      current collapse      trapping effect     
Received:  09 September 2014      Published:  05 April 2015
PACS:  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  73.61.Ey (III-V semiconductors)  
  73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61306113).
Corresponding Authors:  Zhou Xing-Ye, Feng Zhi-Hong     E-mail:  xyzhoufly@163.com;ga917vv@163.com

Cite this article: 

Zhou Xing-Ye, Feng Zhi-Hong, Wang Yuan-Gang, Gu Guo-Dong, Song Xu-Bo, Cai Shu-Jun Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor 2015 Chin. Phys. B 24 048503

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