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Chin. Phys. B, 2015, Vol. 24(3): 037203    DOI: 10.1088/1674-1056/24/3/037203
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage

Li Qi (李琦)a b, Li Hai-Ou (李海鸥)a, Tang Ning (唐宁)a, Zhai Jiang-Hui (翟江辉)a, Song Shu-Xiang (宋树祥)c
a Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China;
b State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
c College of Electronic Engineering, Guangxi Normal University, Guilin 541004, China
Abstract  A new SOI power device with multi-region high-concentration fixed charge (MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer (BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.
Keywords:  multi-region high-concentration fixed interface charge      model of breakdown voltage  
Received:  30 July 2014      Revised:  19 October 2014      Accepted manuscript online: 
PACS:  72.80.Cw (Elemental semiconductors)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Fund: Project supported by the State Key Laboratory of Electronic Thin Films and Integrated Devices of China (Grant No. KFJJ201205), the Department of Education Project of Guangxi Province, China (Grant No. 201202ZD041), the Postdoctoral Science Foundation Project of China (Grant Nos. 2012M521127 and 2013T60566), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).
Corresponding Authors:  Li Hai-Ou     E-mail:  lqmoon@guet.edu.cn

Cite this article: 

Li Qi (李琦), Li Hai-Ou (李海鸥), Tang Ning (唐宁), Zhai Jiang-Hui (翟江辉), Song Shu-Xiang (宋树祥) New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage 2015 Chin. Phys. B 24 037203

[1] Duan B X, Zhang B and Li Z J 2007 Chin. Phys. 16 3754
[2] Duan B X, Zhang B and Li Z J 2007 Chin. Phys. Lett. 24 1342
[3] Merchant S, Arnold E and Baumgart H 2006 Electron Dev. Lett. 27 377
[4] Wondrak W and Held R 1998 US Patent: 5767548
[5] Kumar M J and Sithanandam R 2010 IEEE Trans. Electron Dev. 57 1719
[6] Sharbati S and Ali Orouji A 2013 Superlatt. Microstruc. 57 77
[7] Cheng X, Song Z, Dong Y, Yu Y and Shen D 2005 Microelectron Engin. 81 150
[8] Guo Y F, Li Z J, Zhang B and Fang J 2004 International Conference on Solid-State and Integrated Circuits Technology 1 357
[9] Cheng J B, Zhang B and Li Z J 2008 IEEE Electron Dev. Lett. 29 645
[10] Khemka V, Parthasarathy V and Zhu R H 2003 IEEE Electron Dev. Lett. 24 664
[11] Luo X R, Li Z J and Zhang B 2005 Chin. J. Semicond. 26 2154
[12] Luo X, Zhang B and Li Z 2007 IEEE Electron Dev. Lett. 28 422
[13] Wu L J, Hu S D, Zhang B and Li Z J 2011 Chin. Phys. B 20 027101
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