Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor

doi:10.1088/1674-1056/23/12/128502

Abstract Gate-modulated generation–recombination (GMGR) current I_GMGR induced by the interface traps in an n-type metal–oxide–semiconductor field-effect transistor (nMOSFET) is investigated. The generation current is found to expand rightwards with increasing the reversed drain PN junction bias, and the recombination current is enhanced as the forward drain bias increases. The variations of I_GMGR curves are ascribed to the changes of the electron density and hole density at the interface, N_S and P_S, under the different drain bias voltages. Based on an analysis of the physical mechanism, the I_GMGR model is set up by introducing two coefficients (m and t). The coefficients m and t can modulate the curves widths and peak values. The simulated results under reverse mode and forward mode are obviously in agreement with the experimental results. This proves that this model can be applicable for generation current and recombination current and that the theory behind the model is reasonable. The details of the relevant mechanism are given in the paper.

Keywords: generation recombination interface trap nMOSFET

Received: 05 June 2014
Revised: 17 July 2014
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61306131) and the Research Project of Education Department of Shaanxi Province, China (Grant No. 2013JK1095).

Corresponding Authors: Chen Hai-Feng
E-mail: chenhaifeng@xupt.edu.cn

Cite this article:

Chen Hai-Feng (陈海峰) Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor 2014 Chin. Phys. B 23 128502


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Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor

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