Please wait a minute...
Chin. Phys. B, 2014, Vol. 23(8): 088106    DOI: 10.1088/1674-1056/23/8/088106
SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 Prev   Next  

Properties of passive nano films on zircaloy-4 affected by defects induced by hydrogen permeation

Gu Jun-Jia, Ling Yun-Hana, Zhang Rui-Qianb, Dai Xunb, Bai Xin-Dea
a School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;
b Reactor Fuel and Materials Laboratory, Nuclear Power Institute of China, Chengdu 610041, China
Abstract  In this work, hydrogen absorption and the permeation behavior of the passive layer formed on zircaloy-4 are investigated. Potentiodynamic polarization, Mott-Schottky analysis, electrochemical impedance spectroscopy, and Raman scattering spectroscopy are employed to characterize the passive defects before and after hydrogen permeation. It is found that the nanoscale passive ZrO2 films play an important role in the resistance against corrosion; hydrogen impingement, however, reduces the passive impedance towards hydrothermal oxidation. The increase of defects (vacancies) in passive film is probably attributed to the degradation. We believe that this finding will provide valuable insight into the understanding of the corrosion mechanism of zircaloys used in light water reactors.
Keywords:  zircaloy      defects      hydrogen permeation      electrochemical measurement     
Received:  04 September 2013      Published:  15 August 2014
PACS:  81.07.-b (Nanoscale materials and structures: fabrication and characterization)  
  82.45.-h (Electrochemistry and electrophoresis)  
  82.45.Bb (Corrosion and passivation)  
  68.47.Gh (Oxide surfaces)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CB610501), the Funds from the State Key Laboratory of Surface and Chemistry, China (Grant No. SPC 201102), and the Reactor Fuel and Materials Laboratory, China (Grant No. STRFML-2013-05).
Corresponding Authors:  Ling Yun-Han     E-mail:  yhling@mail.tsinghua.edu.cn

Cite this article: 

Gu Jun-Ji, Ling Yun-Han, Zhang Rui-Qian, Dai Xun, Bai Xin-De Properties of passive nano films on zircaloy-4 affected by defects induced by hydrogen permeation 2014 Chin. Phys. B 23 088106

[1] Khatamian D 1997 J. Alloys Compd. 253 471
[2] Cox B 1997 J. Alloys Compd. 256 244
[3] Elmoselhi M B 1995 J. Alloys Compd. 231 716
[4] Lim B H, Hong H S and Lee K S 2003 J. Nucl. Mater. 312 134
[5] Guedeney P, Trotabas M, Boschiero M, Forat C and Blanpain P 1991 Proceedings of the International Topical Meeting on LWR Fuel Performance (Avignon: Academy of Natural Sciences) p. 141
[6] Vesterlund G and Corsetti L V 1994 Proceedings 1994 International Topical Meeting on Light Water Reactor Fuel Performance (Florida: Academy of Natural Sciences) p. 17
[7] Zieliński A and Sobieszczyk S 2011 Int. J. Hydrogen Energy 36 8619
[8] Brass A M and Chanfreau A 1996 Acta Mater. 44 3823
[9] Manolatos P, Jerome M, Duret-Thual C and Le Coze J 1995 Corros. Sci. 37 1773
[10] Chen Y, Urquidi-Macdonald M and Macdonald D D 2006 J. Nucl. Mater. 348 133
[11] Macdonald J R 1992 Ann. Biomed. Eng. 20 289
[12] Macdonald D D 1992 J. Electrochem. Soc. 139 3434
[13] Ling Y, Liao J, Liu X, et al. 2010 J. Nanosci. Nanotechnol. 10 7020
[14] Barberis P, Merle-Méjean T and Quintard P 1997 J. Nucl. Mater. 246 232
[1] Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃
Qing Liao(廖庆), Bingsheng Li(李炳生), Long Kang(康龙), Xiaogang Li(李小刚). Chin. Phys. B, 2020, 29(7): 076103.
[2] Ab initio calculations on oxygen vacancy defects in strained amorphous silica
Bao-Hua Zhou(周保花), Fu-Jie Zhang(张福杰), Xiao Liu(刘笑), Yu Song(宋宇), Xu Zuo(左旭). Chin. Phys. B, 2020, 29(4): 047103.
[3] Ground-state phases and spin textures of spin-orbit-coupled dipolar Bose-Einstein condensates in a rotating toroidal trap
Qing-Bo Wang(王庆波), Hui Yang(杨慧), Ning Su(苏宁), and Ling-Hua Wen(文灵华). Chin. Phys. B, 2020, 29(11): 116701.
[4] Low temperature photoluminescence study of GaAs defect states
Jia-Yao Huang(黄佳瑶), Lin Shang(尚林), Shu-Fang Ma(马淑芳), Bin Han(韩斌), Guo-Dong Wei(尉国栋), Qing-Ming Liu(刘青明), Xiao-Dong Hao(郝晓东), Heng-Sheng Shan(单恒升), Bing-She Xu(许并社). Chin. Phys. B, 2020, 29(1): 010703.
[5] Effect of defects properties on InP-based high electron mobility transistors
Shu-Xiang Sun(孙树祥), Ming-Ming Chang(常明铭), Meng-Ke Li(李梦珂), Liu-Hong Ma(马刘红), Ying-Hui Zhong(钟英辉), Yu-Xiao Li(李玉晓), Peng Ding(丁芃), Zhi Jin(金智), Zhi-Chao Wei(魏志超). Chin. Phys. B, 2019, 28(7): 078501.
[6] Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode
Jin-Lan Li(李金岚), Yun Li(李赟), Ling Wang(汪玲), Yue Xu(徐跃), Feng Yan(闫锋), Ping Han(韩平), Xiao-Li Ji(纪小丽). Chin. Phys. B, 2019, 28(2): 027303.
[7] Defects and electrical properties in Al-implanted 4H-SiC after activation annealing
Yi-Dan Tang(汤益丹), Xin-Yu Liu(刘新宇), Zheng-Dong Zhou(周正东), Yun Bai(白云), Cheng-Zhan Li(李诚瞻). Chin. Phys. B, 2019, 28(10): 106101.
[8] Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications
Fang-Yu Yue(越方禹), Su-Yu Ma(马骕驭), Jin Hong(洪进), Ping-Xiong Yang(杨平雄), Cheng-Bin Jing(敬承斌), Ye Chen(陈晔), Jun-Hao Chu(褚君浩). Chin. Phys. B, 2019, 28(1): 017104.
[9] Periodically modulated interaction effect on transport of Bose-Einstein condensates in lattice with local defects
Kun-Qiang Zhu(朱坤强), Zi-Fa Yu(鱼自发), Ji-Ming Gao(高吉明), Ai-Xia Zhang(张爱霞), Hong-Ping Xu(徐红萍), Ju-Kui Xue(薛具奎). Chin. Phys. B, 2019, 28(1): 010307.
[10] Impressive self-healing phenomenon of Cu2ZnSn(S, Se)4 solar cells
Qing Yu(于晴), Jiangjian Shi(石将建), Pengpeng Zhang(张朋朋), Linbao Guo(郭林宝), Xue Min(闵雪), Yanhong Luo(罗艳红), Huijue Wu(吴会觉), Dongmei Li(李冬梅), Qingbo Meng(孟庆波). Chin. Phys. B, 2018, 27(6): 066108.
[11] Detection of finger interruptions in silicon solar cells using photoluminescence imaging
Lei Zhang(张磊), Peng Liang(梁鹏), Hui-Shi Zhu(朱慧时), Pei-De Han(韩培德). Chin. Phys. B, 2018, 27(6): 068801.
[12] Fine structures of defect cores induced by elastic anisotropy and biaxiality in hybrid alignment nematics
Xuan Zhou(周璇), Si-Bo Chen(陈思博), Zhi-Dong Zhang(张志东). Chin. Phys. B, 2018, 27(5): 056103.
[13] Wettability of Si and Al-12Si alloy on Pd-implanted 6H-SiC
Ting-Ting Wang(汪婷婷), Gui-Wu Liu(刘桂武), Zhi-Kun Huang(黄志坤), Xiang-Zhao Zhang(张相召), Zi-Wei Xu(徐紫巍), Guan-Jun Qiao(乔冠军). Chin. Phys. B, 2018, 27(4): 046101.
[14] Distinctive distribution of defects in CdZnTe: In ingots and their effects on the photoelectric properties
Xu Fu(符旭), Fang-Bao Wang(王方宝), Xi-Ran Zuo(左希然), Ze-Jian Wang(王泽剑), Qian-Ru Wang(王倩茹), Ke-Qin Wang(王柯钦), Ling-Yan Xu(徐凌燕), Ya-Dong Xu(徐亚东), Rong-Rong Guo(郭榕榕), Hui Yu(于晖), Wan-Qi Jie(介万奇). Chin. Phys. B, 2018, 27(3): 037302.
[15] Theoretical study on the kesterite solar cells based on Cu2ZnSn(S,Se)4 and related photovoltaic semiconductors
Dingrong Liu(刘定荣), Dan Han(韩丹), Menglin Huang(黄梦麟), Xian Zhang(张弦), Tao Zhang(张涛), Chenmin Dai(戴称民), Shiyou Chen(陈时友). Chin. Phys. B, 2018, 27(1): 018806.
No Suggested Reading articles found!