Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties

doi:10.1088/1674-1056/23/7/076801

Abstract Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal-insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from (111) to (011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal-insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal-insulator transition.

Keywords: vanadium dioxide metal-insulator transition rapid thermal annealing hysteresis

Received: 05 November 2013
Revised: 23 January 2014
Accepted manuscript online:

PACS:	68.55.jd	(Thickness)
	78.20.-e	(Optical properties of bulk materials and thin films)
	73.50.Lw	(Thermoelectric effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61101055) and the Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20100032120029).

Corresponding Authors: Liang Ji-Ran
E-mail: liang_jiran@tju.edu.cn

About author: 68.55.jd; 78.20.-e; 73.50.Lw

Cite this article:

Liang Ji-Ran (梁继然), Wu Mai-Jun (吴劢君), Hu Ming (胡明), Liu Jian (刘剑), Zhu Nai-Wei (朱乃伟), Xia Xiao-Xu (夏晓旭), Chen Hong-Da (陈弘达) Fabrication of VO₂ thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties 2014 Chin. Phys. B 23 076801

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Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties

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Fabrication of VO₂ thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties