Fabricating GeO2 passivation layer by N2O plasma oxidation for Ge NMOSFETs application

doi:10.1088/1674-1056/23/6/067701

Abstract In this paper, oxidation of Ge surface by N₂O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO₂ is achieved after 120-s N₂O plasma oxidation at 300 ℃. The GeO₂/Ge interface is atomically smooth. The interface state density of Ge surface after N₂O plasma passivation is about ～ 3×10¹¹ cm^-2·eV^-1. With GeO₂ passivation, the hysteresis of metal-oxide-semiconductor (MOS) capacitor with Al₂O₃ serving as gate dielectric is reduced to ～ 50 mV, compared with ～ 130 mV of the untreated one. The Fermi-level at GeO₂/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.

Keywords: Ge GeO₂ passivation N₂O plasma oxidation Ge NMOSFETs

Received: 06 October 2013
Revised: 16 December 2013
Accepted manuscript online:

PACS:	77.55.D-
	77.55.df	(For silicon electronics)
	77.55.E-
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00601) and the National Natural Science Foundation of China (Grant Nos. 60625403, 60806033, and 60925015).

Corresponding Authors: An Xia, Yun Quan-Xin, Huang Ru
E-mail: anxia@ime.pku.edu.cn;liming.ime@pku.edu.cn;ruhuang@pku.edu.cn

Cite this article:

Lin Meng (林猛), An Xia (安霞), Li Ming (黎明), Yun Quan-Xin (云全新), Li Min (李敏), Li Zhi-Qiang (李志强), Liu Peng-Qiang (刘朋强), Zhang Xing (张兴), Huang Ru (黄如) Fabricating GeO₂ passivation layer by N₂O plasma oxidation for Ge NMOSFETs application 2014 Chin. Phys. B 23 067701

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Fabricating GeO2 passivation layer by N2O plasma oxidation for Ge NMOSFETs application

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Fabricating GeO₂ passivation layer by N₂O plasma oxidation for Ge NMOSFETs application