Retarded thermal oxidation of strained Si substrate

doi:10.1088/1674-1056/23/6/066103

Abstract Strained Si is recognized as a necessary technology booster for modern integrated circuit technology. However, the thermal oxidation behaviors of strained Si substrates are not well understood yet despite their importance. In this study, we for the first time experimentally find that all types of strained Si substrates (uniaxial tensile, uniaxial compressive, biaxial tensile, and biaxial compressive) show smaller thermal oxidation rates than an unstrained Si substrate. The possible mechanisms for these retarded thermal oxidation rates in strained Si substrates are also discussed.

Keywords: strained Si uniaxial and biaxial tensile and compressive stresses thermal oxidation rates

Received: 19 October 2013
Revised: 25 December 2013
Accepted manuscript online:

PACS:	61.72.uf	(Ge and Si)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	81.16.Pr	(Micro- and nano-oxidation)
	77.80.bn	(Strain and interface effects)

Fund: Project supported by the National Key Basic Research Project of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 61376097), and the Program B for Outstanding Ph. D. Candidate of Nanjing University, China (Grant No. 201301B005).

Corresponding Authors: Zhao Yi
E-mail: yzhao@nju.edu.cn

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Sun Jia-Bao (孙家宝), Tang Xiao-Yu (唐晓雨), Yang Zhou-Wei (杨周伟), Shi Yi (施毅), Zhao Yi (赵毅) Retarded thermal oxidation of strained Si substrate 2014 Chin. Phys. B 23 066103

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