Characteristics of dual-frequency capacitively coupled SF6/O2 plasma and plasma texturing of multi-crystalline silicon

doi:10.1088/1674-1056/23/6/065201

Abstract Due to environmental friendly, much attention has now been paid to dry plasma texturing technique serving as an alternative candidate for multicrystalline silicon (mc-Si) surface texturing. In this paper, capacitively coupled plasma (CCP) driven by dual frequency (DF) of 40.68 MHz and 13.56 MHz is first used for plasma texturing of mc-Si with SF₆/O₂ gas mixture. Using hairpin resonant probe and optical emission techniques, DF-CCP characteristics and the influence on mc-silicon surface plasma texturing are investigated at different flow rate ratios, pressures, and radio-frequency (RF) input powers. Experimental results show that suitable plasma texturing of mc-silicon occurs only in a narrow range of plasma parameters, where electron density n_e must be larger than 6.3× 10⁹ cm^-3 and ratio of spectral intensity of F atom to that of O atom ([F]/[O]) in the plasma must be between 0.8 and 0.3. Out of this range, no cone-like structure is formed on the mc-silicon surface. In our experiments, the lowest reflectance of about 7.3% for mc-silicon surface texturing is obtained at an [F]/[O] of 0.5 and n_e of 6.9× 10⁹ cm^-3.

Keywords: dual frequency capacitively coupled plasma plasma texturing multi-crystalline silicon electron density

Received: 12 November 2013

PACS numbers:	52.27.Cm	(Multicomponent and negative-ion plasmas)
	52.70.Ds	(Electric and magnetic measurements)
	52.70.Nc	(Particle measurements)

Fund: Project supported by the Prospective Project of Industry-University-Research Institution of Jiangsu Province, China (Grant No. BY2010125) and the National Natural Science Foundation of China (Grant No. 11175127).

Corresponding Authors: Xin Yu
E-mail: xylzf_1999@suda.edu.cn

About author: 2014-4-15

Cite this article:

Xu Dong-Sheng, Zou Shuai, Xin Yu, Su Xiao-Dong, Wang Xu-Sheng. Characteristics of dual-frequency capacitively coupled SF₆/O₂ plasma and plasma texturing of multi-crystalline silicon. Chin. Phys. B, 0, (): 65201-065201.

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