Enhanced light absorption of silicon in the near-infrared band by designed gold nanostructures

doi:10.1088/1674-1056/23/4/047306

Abstract A scheme to enhance near-infrared band absorption of a Si nanoparticle by placing the Si nanoparticle into a designed gold nanostructure is proposed. Three-dimensional (3D) finite-difference time-domain simulations are employed to calculate the absorption spectrum of the Si nanostructure and maximize it by generating alternate designs. The results show that in the near-infrared region over 700 nm, the absorption of a pure Si nanoparticle is very low, but when the same nanoparticle is placed within an optimally designed gold nanostructure, its absorption cross section can be enhanced by more than two orders of magnitude in the near-infrared band.

Keywords: surface plasmon resonance near-infrared silicon absorption finite-difference time-domain optimization

Received: 21 October 2013
Revised: 05 December 2013
Accepted manuscript online:

PACS:	73.20.Mf	(Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))
	78.67.Bf	(Nanocrystals, nanoparticles, and nanoclusters)
	78.20.Bh	(Theory, models, and numerical simulation)

Fund: Project supported by the National Key Basic Research and Development Program of China (Grant No. 2013CB632704) and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. Y1 V2013L11).

Corresponding Authors: Li Zhi-Yuan
E-mail: lizy@aphy.iphy.ac.cn

About author: 73.20.Mf; 78.67.Bf; 78.20.Bh

Cite this article:

Liu Ju (刘菊), Zhong Xiao-Lan (钟晓岚), Li Zhi-Yuan (李志远) Enhanced light absorption of silicon in the near-infrared band by designed gold nanostructures 2014 Chin. Phys. B 23 047306

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Enhanced light absorption of silicon in the near-infrared band by designed gold nanostructures

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