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Chin. Phys. B, 2014, Vol. 23(4): 047304    DOI: 10.1088/1674-1056/23/4/047304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

Ibrahim Yücedağa, Ahmet Kayab, Şemsettin Altındalc, Ibrahim Uslud
a Department of Computer Engineering, Technology Faculty, Duzce University, Duzce, Turkey;
b Department of Opticianry, Vocationel School of Medical Sciences, Turgut Ozal University, Ankara, Turkey;
c Department of Physics, Faculty of Science and Arts, Gazi University, Ankara, Turkey;
d Department of Chemistry, Faculty of Science and Arts, Gazi University, Ankara, Turkey
Abstract  In order to investigate of cobalt-doped interfacial polyvinyl alcohol (PVA) layer and interface trap (Dit) effects, Al/p-Si Schottky barrier diodes (SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carried out in the frequency and voltage ranges of 30 kHz-300 kHz and-5 V-6 V, respectively. C-V or ε '-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance (Rs), and interfacial layer. Both the real and imaginary parts of dielectric constant (ε ' and ε") and electric modulus (M' and M"), loss tangent (tan δ), and AC electrical conductivity (σac) are investigated, each as a function of frequency and applied bias voltage. Each of the M' versus V and M" versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance (C) and conductance (G/w) values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of Al/Co-doped PVA/p-Si (MPS) type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance (CLF-CHF) method.
Keywords:  Al/Co-PVA/p-Si (MPS)      electrical and dielectric properties      AC electrical conductivity      frequency and voltage dependence  
Received:  25 June 2013      Revised:  26 August 2013      Accepted manuscript online: 
PACS:  73.61.Ph (Polymers; organic compounds)  
  77.84.Nh (Liquids, emulsions, and suspensions; liquid crystals)  
  78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))  
  78.40.Me (Organic compounds and polymers)  
Corresponding Authors:  Ahmet Kaya     E-mail:  ahmetkaya0107@hotmail.com
About author:  73.61.Ph; 77.84.Nh; 78.20.Ci; 78.40.Me

Cite this article: 

Ibrahim Yücedağ, Ahmet Kaya, Şemsettin Altındal, Ibrahim Uslu Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature 2014 Chin. Phys. B 23 047304

[1] Aydın M E Yakuphanoğlu F, Eom J and Hwang D 2007 Physica B 387 239
[2] Gupta R K and Singh R A 2004 Mater. Sci. Semicond. Process. 7 83
[3] Rajaputra S, Sagi G and Singh V P 2009 Solar Energy Materials and Solar Cells 93 60
[4] Gupta R K and Singh R A 2005 Composites Science and Technology 65 677
[5] Huang L M, Wen T C and Gopalan A 2005 Thin Solid Films 473 300
[6] Abthagir P S and Saraswathi R 2004 Organic Electronics 5 299
[7] Dökme İ, Altındal Ş and Uslu İ 2012 J. Appl. Polym. Sci. 125 1185
[8] Afandiyava I M, Dökme İ, Altındal Ş, Abdullayeva L K and Askerov Sh G 2008 Microelectron. Eng. 85 247
[9] Ukah N B, Adil D, Granstrom J, Gupta R K, Ghosh K and Guha S 2011 Organig. Electron. 12 1580
[10] Guha S, Adil D, Ukah N B, Gupta R K and Ghosh K 2011 Appl. Phys. A 105 547
[11] Huang X, Zhi C, Jiang P, Golberg D, Bando Y and Tanaka T 2012 Nanotechnology 23 455705
[12] Hanafy T A 2008 J. Appl. Poly. Sci. 108 2540
[13] Reddy S Ch V, Han X, Zhu Q Y, Mai L Q and Chen W 2006 Microelectron. Eng. 83 281
[14] Abdullah O Gh, Hussan S A and Alani A 2011 Assian Transactions on Science & Technology 01 1
[15] Bouropoulos N, Psarras G C, Moustakas N, Chrissanthopoulos A and Baskoutas S 2008 Phys. Stat. Sol. (a) 205 2033
[16] Bohler A, Dirr S, Johannes H H, Ammermann D and Kowalsky W 1997 Synth. Met. 91 95
[17] Yakovlev Y O and Zolin V F 1997 Synth. Met. 91 205
[18] Garten F, Vrijmoeth J, Schlatmann A R, Gill R E, Klapwijk T M and Hadziioannou G 1996 Synth. Met. 76 85
[19] Liang Y, Dong G F, Hu Y C, Hu Y, Wang L D and Qiu Y 2004 Chin. Phys. Lett. 21 2278
[20] Hu Y C, Dong G F, Wang L D, Liang Y and Qiu Y 2004 Chin. Phys. Lett. 21 723
[21] Zhang Z L, Jiang X Y and Xu S H 2000 Chin. Phys. Lett. 17 534
[22] Li C, Peng J B and Zeng W J 2009 Acta Phys. Sin. 58 1992 (in Chinese)
[23] Farag A A M and Yahia I S 2011 Synth. Met. 161 32
[24] Nicollian E H and Brews J R 1982 MOS (Metal Oxide Semiconductor) Physics and Technology (New York: John Wiley & Sons)
[25] Sze S M 1981 Physics of Semiconductor Devices, 2nd edn. (New York: Willey & Sons)
[26] Guan H, Shao C, Wen S, Chen B, Gong J and Yang X 2003 Mater. Chem. Phys. 82 1002
[27] Lee J S, Choi K H, Ghim H D, Kim S S, Chun D H, Kim H Y and Lyoo W S 2004 J. Appl. Poly. Sci. 93 1638
[28] Popescu M and Bunget I 1984 Physics Solid Dielectrics (Amsterdam: Elsevier), p. 291
[29] Symth C P 1955 Dielectric Behaviour and Structure (New York: McGraw-Hill)
[30] Daniel Vera V 1967 Dielectric Relaxation (London: Academic Press)
[31] Pissis P and Kyritsis A 1997 Solid State Ionics 97 105
[32] Altındal Ş, Kanbur H, Yücedağ İ and Tataroğlu A 2008 Microelectron. Eng. 85 1495
[33] Yücedağ İ 2009 Optoelectronics and Advanced Materials: Rapid Communications 3 612
[34] Altındal Ş, Yücedağ İ and Tataroğlu A 2009 Vacuum 84 363
[35] Khan N A, Mumtaz M and Khurram A A 2008 J. Appl. Phys. 104 033916
[36] Macedo P B, Moyniham C T and Bose R 1972 Phys. Chem. Glass. 13 171
[37] Afandiyeva İ M, Dökme İ, Altındal Ş, Bülbül M M and Tataroğlu A 2008 Microelectron. Eng. 85 247
[38] Yücedağ İ, Altındal Ş and Tataroğlu A 2007 Microelectron. Eng. 84 180
[39] Cutroni M, Mandanici A, Piccolo A, Fanggao C, Saunders G A and Mustarelli P 1996 Solid State Ionics 90 167
[40] Maurya D, Kumar and Shripal J 2005 J. Phys. Chem. Solids 66 1614
[41] Riad A S, Korayem M T and Abdel-Malik T G 1999 Physica B 270 140
[42] Dökme İ and Altındal S 2011 IEEE Trans. Electron Dev. 58 4042
[43] Kaya A, Altındal Ş, Asar Y Ş and Sönmez Z 2013 Chin. Phys. Lett. 30 017301
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