A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

doi:10.1088/1674-1056/23/4/048502

Abstract The advantages of a GaN-AlGaN-InGaN last quantum barrier (LQB) in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombination rate, and less efficiency droop compared with conventional GaN LQBs. These improvements in the electrical and optical characteristics are attributed mainly to the specially designed GaN-AlGaN-InGaN LQB, which enhances electron confinement and improves hole injection efficiency.

Keywords: GaN-based light-emitting diode efficiency droop multilayer barrier last quantum barrier

Received: 05 August 2013
Revised: 24 October 2013
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	68.65.Ac	(Multilayers)
	78.66.Fd	(III-V semiconductors)
	78.67.De	(Quantum wells)

Fund: Project supported by the Special Strategic Emerging Industries of Guangdong Province, China (Grant Nos. 2011A081301004 and 2012A080304006).

Corresponding Authors: Guo Zhi-You
E-mail: guozy@scnu.edu.cn

About author: 85.60.Jb; 68.65.Ac; 78.66.Fd; 78.67.De

Cite this article:

Yang Bin (杨斌), Guo Zhi-You (郭志友), Xie Nan (解楠), Zhang Pan-Jun (张盼君), Li Jing (李婧), Li Fang-Zheng (李方正), Lin Hong (林宏), Zheng Huan (郑欢), Cai Jin-Xin (蔡金鑫) A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED 2014 Chin. Phys. B 23 048502

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A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

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