Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

doi:10.1088/1674-1056/23/4/047201

Abstract By making use of the quasi-two-dimensional (quasi-2D) model, the current-voltage (I-V) characteristics of In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths are simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm²/V· s for the prepared In_0.18Al_0.82N/AlN/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.

Keywords: In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors channel electric field distribution polarization Coulomb field scattering two-dimensional electron gas mobility

Received: 03 June 2013
Revised: 30 August 2013
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	72.10.-d	(Theory of electronic transport; scattering mechanisms)
	72.20.Fr	(Low-field transport and mobility; piezoresistance)

Fund: Projected supported by the National Natural Science Foundation of China (Grant No.11174182) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No.20110131110005).

Corresponding Authors: Lin Zhao-Jun
E-mail: linzj@sdu.edu.cn

About author: 72.80.Ey; 72.10.-d; 72.20.Fr

Cite this article:

Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Yang Ming (杨铭), Wang Yu-Tang (王玉堂) Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors 2014 Chin. Phys. B 23 047201

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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors