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Chin. Phys. B, 2013, Vol. 22(12): 127103    DOI: 10.1088/1674-1056/22/12/127103
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

In situ electronic structural study of VO2 thin film across the metal–insulator transition

Emin Muhemmed (伊明江·买买提), Abduleziz Ablat (阿布都艾则孜·阿布来提), Wu Rui (吴蕊), Wang Jia-Ou (王嘉鸥), Qian Hai-Jie (钱海杰), Kurash Ibrahim (奎热西·依布拉欣)
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Abstract  The in situ valence band photoemission spectrum (PES) and X-ray absorption spectrum (XAS) at V L-L edges of the VO2 thin film, which is prepared by pulsed laser deposition, are measured across the metal–insulator transition (MIT) temperature (TMIT=67 ℃). The spectra show evidence for changes in the electronic structure depending on temperature. Across the TMIT, pure V 3d characteristic d and O 2p-V 3d hybridization characteristic πpd, σpd bands vary in binding energy position and density of state distributions. The XAS reveals a temperature-dependent reversible energy shift at the V L-edge. The PES and XAS results imply a synergetic energy position shift of occupied valence bands and unoccupied conduction band states across the phase transition. A joint inspection of the PES and XAS results shows that the MIT is not a one-step process, instead it is a process in which a semiconductor phase appears as an intermediate state. The final metallic phase from insulating state is reached through insulator–semiconductor, semiconductor–metal processes, and vice versa. The conventional MIT at around the TMIT=67 ℃ is actually a semiconductor–insulator transformation point.
Keywords:  vanadium dioxide      metal–insulator transition      electronic structure      photoemission spectroscopy  
Received:  07 March 2013      Revised:  14 April 2013      Accepted manuscript online: 
PACS:  71.30.+h (Metal-insulator transitions and other electronic transitions)  
  79.60.-i (Photoemission and photoelectron spectra)  
  78.70.Dm (X-ray absorption spectra)  
  73.20.At (Surface states, band structure, electron density of states)  
Fund: Project supported by the Natural Science Foundation of the Chinese Academy of Sciences (Grant No. H91G750Y21).
Corresponding Authors:  Kurash Ibrahim     E-mail:  kurash@ihep.ac.cn

Cite this article: 

Emin Muhemmed (伊明江·买买提), Abduleziz Ablat (阿布都艾则孜·阿布来提), Wu Rui (吴蕊), Wang Jia-Ou (王嘉鸥), Qian Hai-Jie (钱海杰), Kurash Ibrahim (奎热西·依布拉欣) In situ electronic structural study of VO2 thin film across the metal–insulator transition 2013 Chin. Phys. B 22 127103

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