Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier

doi:10.1088/1674-1056/22/11/118504

Abstract In this study, the efficiency droop of an InGaN light-emitting diode (LED) is reduced significantly by using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device (APSYS).

Keywords: light-emitting diodes p-AlGaN/GaN superlattice last quantum barrier efficiency droop

Received: 06 March 2013
Revised: 12 July 2013
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	73.61.Ey	(III-V semiconductors)
	78.60.Fi	(Electroluminescence)
	87.15.A-	(Theory, modeling, and computer simulation)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong Province, China (Grant Nos. 2010A081002005, 2011A081301003, and 2012A080304016), the First Phase of Construction of Guangdong Research Institute of Semiconductor Lighting Industrial Technology, China (Grant No. 2010A081001001), the High Efficiency LED Epitaxy and Chip Structure and Key Technology for Industrialization, China (Grant No. 2012A080302002), and the Youth Funding of South China Normal University (Grant No. 2012KJ018).

Corresponding Authors: Zheng Shu-Wen
E-mail: LED@scnu.edu.cn

Cite this article:

Xiong Jian-Yong (熊建勇), Zhao Fang (赵芳), Fan Guang-Han (范广涵), Xu Yi-Qin (许毅钦), Liu Xiao-Ping (刘小平), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Zhang Tao (张涛), Zheng Shu-Wen (郑树文) Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier 2013 Chin. Phys. B 22 118504

[1]	Fujii T, Gao Y, Sharma R, Hu E L, DenBaars S P and Nakamura S 2004 Appl. Phys. Lett. 84 855
[2]	Koike M, Shibata N, Kato H and Takahashi Y 2002 IEEE J. Sel. Top Quant. Electron. 8 271
[3]	Grice A W, Bradley D D C, Bernius M T, Inbasekaran M, Wu W W and Woo E P 1998 Appl. Phys. Lett. 73 629
[4]	Rozhansky I V and Zakheim D A 2007 Phys. Status Solidi m(am) 204 227
[5]	Zhao H, Liu G, Arif R A and Tansu N 2010 Solid-State Electron. 54 1119
[6]	Schubert M F, Xu J, Kim J K, Schubert E F, Kim M H, Yoon S, Lee S M, Sone C, Sakong T and Park Y 2008 Appl. Phys. Lett. 93 041102
[7]	Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J and Park Y 2007 Appl. Phys. Lett. 91 183507
[8]	Su Y K, Chang S J, Wei S C, Chuang R W, Chen S M and Li W L 2005 IEEE Electron. Device Lett. 26 891
[9]	Monemar B and Sernelius B E 2007 Appl. Phys. Lett. 91 181103
[10]	Onuma T, Amaike H, Kubota M, Okamoto K, Ohta H, Ichihara J, Takasu H and Chichibu S F 2007 Appl. Phys. Lett. 91 181903
[11]	David A and Grundmann M J 2010 Appl. Phys. Lett. 96 103504
[12]	Wang C H, Chen J R, Chiu C H, Kuo H C, Li Y L, Lu T C and Wang S C 2010 IEEE Photon. Technol. Lett. 22 236
[13]	Chen J, Fan G H and Zhang Y Y 2013 Chin. Phys. B 22 018504
[14]	Tong J H, Li S T, Lu T P, Liu C, Wang H L, Wu L J, Zhao B J, Wang X F and Chen X 2012 Chin. Phys. B 21 118502
[15]	Zhao F, Yao G R, Song J J, Ding B B, Xiong J Y, Su C, Zheng S W, Zhang T and Fan G H 2013 Chin. Phys. B 22 058503
[16]	Chen J, Fan G H, Pang W, Zheng S W and Zhang Y Y 2012 IEEE Photon. Technol. Lett. 24 2218
[17]	Wang T H and Xu J L 2012 Chin. Phys. B 21 128504
[18]	Kuo Y K, Tsai M C, Yen S H, Hsu T C and Shen Y J 2010 IEEE J Quantum Electron 46 1214
[19]	Liu X P, Fan G H, Zheng S W, Gong C C, Lu T P, Zhang Y Y, Xu Y Q and Zhang T 2013 Science China Technological Sciences 56 98
[20]	Crosslight Software Inc. 2009 APSYS
[21]	Zhang Y Y and Yin Y A 2011 Appl. Phys. Lett. 99 221103
[22]	Zhang Y Y, Zhu X L, Yin Y A and Ma J 2012 IEEE Electron. Device Lett. 33 994

[1]	Ion migration in metal halide perovskite QLEDs and its inhibition Yuhui Dong(董宇辉), Danni Yan(严丹妮), Shuai Yang(杨帅), Naiwei Wei(魏乃炜),Yousheng Zou(邹友生), and Haibo Zeng(曾海波). Chin. Phys. B, 2023, 32(1): 018507.
[2]	Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Chin. Phys. B, 2022, 31(1): 017801.
[3]	Large-area fabrication: The next target of perovskite light-emitting diodes Hang Su(苏杭), Kun Zhu(朱坤), Jing Qin(钦敬), Mengyao Li(李梦瑶), Yulin Zuo(左郁琳), Yunzheng Wang(王允正), Yinggang Wu(吴迎港), Jiawei Cao(曹佳维), and Guolong Li(李国龙). Chin. Phys. B, 2021, 30(8): 088502.
[4]	Theoretical verification of intermolecular hydrogen bond induced thermally activated delayed fluorescence in SOBF-Ome Mu-Zhen Li(李慕臻), Fei-Yan Li(李飞雁), Qun Zhang(张群), Kai Zhang(张凯), Yu-Zhi Song(宋玉志), Jian-Zhong Fan(范建忠), Chuan-Kui Wang(王传奎), and Li-Li Lin(蔺丽丽). Chin. Phys. B, 2021, 30(12): 123302.
[5]	Reliability of organic light-emitting diodes in low-temperature environment Saihu Pan(潘赛虎), Zhiqiang Zhu(朱志强), Kangping Liu(刘康平), Hang Yu(于航), Yingjie Liao(廖英杰), Bin Wei(魏斌), Redouane Borsali, and Kunping Guo(郭坤平). Chin. Phys. B, 2020, 29(12): 128503.
[6]	Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals Byung-Ryool Hyun, Mikita Marus, Huaying Zhong(钟华英), Depeng Li(李德鹏), Haochen Liu(刘皓宸), Yue Xie(谢阅), Weon-kyu Koh, Bing Xu(徐冰), Yanjun Liu(刘言军), Xiao Wei Sun(孙小卫). Chin. Phys. B, 2020, 29(1): 018503.
[7]	Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate Qi Wang(王琦), Guo-Dong Yuan(袁国栋), Wen-Qiang Liu(刘文强), Shuai Zhao(赵帅), Lu Zhang(张璐), Zhi-Qiang Liu(刘志强), Jun-Xi Wang(王军喜), Jin-Min Li(李晋闽). Chin. Phys. B, 2019, 28(8): 087802.
[8]	Effects of hole-injection through side-walls of large V-pits on efficiency droop in Ⅲ-nitride LEDs Dong-Yan Zhang(张东炎), Jie Zhang(张洁), Xiao-Feng Liu(刘晓峰), Sha-Sha Chen(陈沙沙), Hui-Wen Li(李慧文), Ming-Qing Liu(刘明庆), Da-Qian Ye(叶大千), Du-Xiang Wang(王笃祥). Chin. Phys. B, 2019, 28(4): 048501.
[9]	Double superlattice structure for improving the performance of ultraviolet light-emitting diodes Yan-Li Wang(王燕丽), Pei-Xian Li(李培咸), Sheng-Rui Xu(许晟瑞), Xiao-Wei Zhou(周小伟), Xin-Yu Zhang(张心禹), Si-Yu Jiang(姜思宇), Ru-Xue Huang(黄茹雪), Yang Liu(刘洋), Ya-Li Zi(訾亚丽), Jin-Xing Wu(吴金星), Yue Hao(郝跃). Chin. Phys. B, 2019, 28(3): 038502.
[10]	InP quantum dots-based electroluminescent devices Qianqian Wu(吴倩倩), Fan Cao(曹璠), Lingmei Kong(孔令媚), Xuyong Yang(杨绪勇). Chin. Phys. B, 2019, 28(11): 118103.
[11]	Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells Chang-Fu Li(李长富), Kai-Ju Shi(时凯居), Ming-Sheng Xu(徐明升), Xian-Gang Xu(徐现刚), Zi-Wu Ji(冀子武). Chin. Phys. B, 2019, 28(10): 107803.
[12]	Current diffusion and efficiency droop in vertical light emitting diodes R Q Wan(万荣桥), T Li(李滔), Z Q Liu(刘志强), X Y Yi(伊晓燕), J X Wang(王军喜), J H Li(李军辉), W H Zhu(朱文辉), J M Li(李晋闽), L C Wang(汪炼成). Chin. Phys. B, 2019, 28(1): 017203.
[13]	Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer Lin-Yuan Wang(王林媛), Wei-Dong Song(宋伟东), Wen-Xiao Hu(胡文晓), Guang Li(李光), Xing-Jun Luo(罗幸君), Hu Wang(汪虎), Jia-Kai Xiao(肖稼凯), Jia-Qi Guo(郭佳琦), Xing-Fu Wang(王幸福), Rui Hao(郝锐), Han-Xiang Yi(易翰翔), Qi-Bao Wu(吴启保), Shu-Ti Li(李述体). Chin. Phys. B, 2019, 28(1): 018503.
[14]	Sputtered gold nanoparticles enhanced quantum dot light-emitting diodes Abida Perveen, Xin Zhang(张欣), Jia-Lun Tang(汤加仑), Deng-Bao Han(韩登宝), Shuai Chang(常帅), Luo-Gen Deng(邓罗根), Wen-Yu Ji(纪文宇), Hai-Zheng Zhong(钟海政). Chin. Phys. B, 2018, 27(8): 086101.
[15]	Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers Li-Wen Cheng(程立文), Jian Ma(马剑), Chang-Rui Cao(曹常锐), Zuo-Zheng Xu(徐作政), Tian Lan(兰天), Jin-Peng Yang(杨金彭), Hai-Tao Chen(陈海涛), Hong-Yan Yu(于洪岩), Shu-Dong Wu(吴曙东), Shun Yao(尧舜), Xiang-Hua Zeng(曾祥华), Zai-Quan Xu(徐仔全). Chin. Phys. B, 2018, 27(8): 088504.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier

Cite this article:

Online attention