High-voltage SOI lateral MOSFET with a dual vertical field plate

doi:10.1088/1674-1056/22/11/118502

Abstract A new silicon-on-insulator (SOI) power lateral MOSFET with a dual vertical field plate (VFP) in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concentration of the drift region, resulting in remarkable improvements in breakdown voltage (BV) and specific on-resistance (R_on,sp). The mechanism of the VFP is analyzed and the characteristics of BV and R_on,sp are discussed. It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V, and the R_on,sp decreases from 366 mΩ·cm² to 110 mΩ·cm².

Keywords: breakdown voltage specific on-resistance vertical field plate oxide trench

Received: 22 May 2013
Revised: 02 July 2013
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)
	84.70.+p	(High-current and high-voltage technology: power systems; power transmission lines and cables)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61176069), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0062), and Project of 51308020304.

Corresponding Authors: Fan Jie
E-mail: fan576@163.com

Cite this article:

Fan Jie (范杰), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) High-voltage SOI lateral MOSFET with a dual vertical field plate 2013 Chin. Phys. B 22 118502

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High-voltage SOI lateral MOSFET with a dual vertical field plate

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