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Chin. Phys. B, 2013, Vol. 22(11): 114212    DOI: 10.1088/1674-1056/22/11/114212
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High-speed and broad optical bandwidth silicon modulator

Xu Hao (徐浩), Li Xian-Yao (李显尧), Xiao Xi (肖希), Li Zhi-Yong (李智勇), Yu Yu-De (俞育德), Yu Jin-Zhong (余金中)
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  A high-speed silicon modulator with broad optical bandwidth is proposed based on a symmetrically configured Mach–Zehnder interferometer. Careful phase bias control and traveling-wave design are used to improve the high-speed performance. Over a broadband wavelength range, high-speed operation up to 30 Gbit/s with a 4.5 dB–5.5 dB extinction ratio is experimentally demonstrated with a low driving voltage of 3 V.
Keywords:  optical modulators      integrated optics      optoelectronic device characterization  
Received:  04 June 2013      Revised:  15 July 2013      Accepted manuscript online: 
PACS:  42.82.-m (Integrated optics)  
  42.79.Hp (Optical processors, correlators, and modulators)  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2012AA012202), the National Basic Research Program of China (Grant No. 2011CB301701), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KGCX2-EW-102), and the National Natural Science Foundation of China (Grant Nos. 61107048 and 61275065).
Corresponding Authors:  Yu Yu-De     E-mail:  yudeyu@semi.ac.cn

Cite this article: 

Xu Hao (徐浩), Li Xian-Yao (李显尧), Xiao Xi (肖希), Li Zhi-Yong (李智勇), Yu Yu-De (俞育德), Yu Jin-Zhong (余金中) High-speed and broad optical bandwidth silicon modulator 2013 Chin. Phys. B 22 114212

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