Please wait a minute...
Chin. Phys. B, 2013, Vol. 22(10): 106803    DOI: 10.1088/1674-1056/22/10/106803
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Influence of Si doping on the structural and optical properties of InGaN epilayers

Lu Ping-Yuan (卢平元)a b, Ma Zi-Guang (马紫光)b, Su Shi-Chen (宿世臣)a, Zhang Li (张力)a, Chen Hong (陈弘)b, Jia Hai-Qiang (贾海强)b, Jiang Yang (江洋)b, Qian Wei-Ning (钱卫宁)a, Wang Geng (王耿)a, Lu Tai-Ping (卢太平)b, He Miao (何苗)a
a Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b Beijing National Laboratory of Condensed Matter, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Abstract  Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction (HRXRD), photolumimescence (PL), scanning electron microscope (SEM), and atomic force microscopy (AFM). It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing the formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.
Keywords:  Si doping      InGaN      V-shaped defect  
Received:  08 January 2013      Revised:  11 April 2013      Accepted manuscript online: 
PACS:  68.55.Jk  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  78.60.Hk (Cathodoluminescence, ionoluminescence)  
  78.66.Fd (III-V semiconductors)  
Fund: Project supported by the National High Technology Research and Development Program of China (Grant Nos. 2011AA03A112, 2011AA03A106, and 2013AA03A101), the National Natural Science Foundation of China (Grant Nos. 11204360, 61210014, and 61078046), the Science & Technology Innovation Program of Department of Education of Guangdong Province, China (Grant No. 2012CXZD0017), the Industry-Academia Research Union Special Fund of Guangdong Province, China (Grant No. 2012B091000169), and the Science & Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund, China (Grant No. 2012B090600038).
Corresponding Authors:  Chen Hong, He Miao     E-mail:  hchen@aphy.iphy.ac.cn;herofate@126.com

Cite this article: 

Lu Ping-Yuan (卢平元), Ma Zi-Guang (马紫光), Su Shi-Chen (宿世臣), Zhang Li (张力), Chen Hong (陈弘), Jia Hai-Qiang (贾海强), Jiang Yang (江洋), Qian Wei-Ning (钱卫宁), Wang Geng (王耿), Lu Tai-Ping (卢太平), He Miao (何苗) Influence of Si doping on the structural and optical properties of InGaN epilayers 2013 Chin. Phys. B 22 106803

[1] Nakamura S, Senoh M, Nagahama S, Lwasa N, Yamada T, Matsushita T, Kiyoku H and Sugimoto Y 1996 Jpn. J. Appl. Phys. 35 L74
[2] Chichibu S, Azuhata T, Sota T and Nakamura S 1997 Appl. Phys. Lett. 70 2822
[3] Mukai T, Yamada M and Nakamura S 1999 Jpn. J. Appl. Phys. 38 3976
[4] Lu T P, Li S T, Zhang K, Liu C, Xiao G W, Zhou Y G, Zheng S W, Yin Y A, Wu L J, Wang H L and Yang X D 2011 Chin. Phys. B 20 108504
[5] Lu T P, Li S T, Zhang K, Liu C, Xiao G W, Zhou Y G, Zheng S W, Yin Y A, Wu L J, Wang H L and Yang X D 2011 Chin. Phys. B 20 098503
[6] Pei X J, Guo L W, Wang X H, Wang Y, Jia H Q, Chen H and Zhou J M 2009 Chin. Phys. Lett. 26 028101
[7] Kanie H and Yoshimura T 2003 Phys. Status Solidi (c) 0 2729
[8] Wang X H, Guo L W, Jia H Q, Xing Z G, Wang Y, Pei X J, Zhou J M and Chen H 2009 Appl. Phys. Lett. 94 111913
[9] Kusakabe K, Hara T and Ohkawa K 2005 J. Appl. Phys. 97 04503
[10] Ryu M Y, Yu Y J, Shin E J, Yu P W, Lee J I, Yu S K, Oh E S, Nam O H, Sone C S, Park Y J and Kim T I 2000 Solid State Commun. 116 675
[11] Uchida K, Tang T, Goto S, Mishima T, Niwa A and Gotoh J 1999 Appl. Phys. Lett. 74 1153
[12] Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705
[13] Pereira S, Correia M R, Pereira E, O’Donnell K P, Alves E, Sequeira A D, Franco N, Watson I M and Deatcher C J 2002 Appl. Phys. Lett. 80 3913
[14] Chen Y, Takeuchi T, Amano H, Akasaki I, Yamada N, Kaneko Y and Wang S Y 1998 Appl. Phys. Lett. 72 710
[15] Norhrup J E and Romano L T 1999 Appl. Phys. Lett. 74 2319
[16] Li D B, Liu Y H, Katsuno T, Nakao K, Nakamura K, Aoki M, Miyake H and Hiramatsu K 2006 Phys. Status Solidi (c) 3 1944
[17] Li D B, Katsuno T, Nakao K, Aoki M, Miyake H and Hiramatsu K 2006 J. Crystal Growth 290 374
[1] Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process
Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2023, 32(3): 037303.
[2] Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets
Zhaoxia Bi(毕朝霞), Anders Gustafsson, and Lars Samuelson. Chin. Phys. B, 2023, 32(1): 018103.
[3] Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB
Hong Wang(王虹), Zunren Lv(吕尊仁), Shuai Wang(汪帅), Haomiao Wang(王浩淼), Hongyu Chai(柴宏宇), Xiaoguang Yang(杨晓光), Lei Meng(孟磊), Chen Ji(吉晨), and Tao Yang(杨涛). Chin. Phys. B, 2022, 31(9): 098104.
[4] Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers
Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋). Chin. Phys. B, 2022, 31(7): 074206.
[5] Lattice damage in InGaN induced by swift heavy ion irradiation
Ning Liu(刘宁), Li-Min Zhang(张利民), Xue-Ting Liu(刘雪婷), Shuo Zhang(张硕), Tie-Shan Wang(王铁山), and Hong-Xia Guo(郭红霞). Chin. Phys. B, 2022, 31(10): 106103.
[6] Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer
Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Chin. Phys. B, 2022, 31(1): 017801.
[7] Fang-Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures
Yao Li(李姚) and Hong-Bin Pu(蒲红斌). Chin. Phys. B, 2021, 30(9): 097201.
[8] Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate
Yuan-Hao He(何元浩), Wei Mao(毛维), Ming Du(杜鸣), Zi-Ling Peng(彭紫玲), Hai-Yong Wang(王海永), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Chin. Phys. B, 2021, 30(5): 058501.
[9] A MOVPE method for improving InGaN growth quality by pre-introducing TMIn
Zi-Kun Cao(曹子坤), De-Gang Zhao(赵德刚), Jing Yang(杨静), Jian-Jun Zhu(朱建军), Feng Liang(梁锋), and Zong-Shun Liu(刘宗顺). Chin. Phys. B, 2021, 30(1): 018103.
[10] Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer
Quan-Jiang Lv(吕全江), Yi-Hong Zhang(张一鸿), Chang-Da Zheng(郑畅达), Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Jun-Lin Liu(刘军林). Chin. Phys. B, 2020, 29(8): 087801.
[11] Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection
Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益). Chin. Phys. B, 2020, 29(4): 047802.
[12] Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift
Ping Chen(陈平), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Wei Liu(刘炜), Feng Liang(梁锋), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群). Chin. Phys. B, 2020, 29(3): 034206.
[13] Photoluminescence of green InGaN/GaN MQWs grown on pre-wells
Shou-Qiang Lai(赖寿强), Qing-Xuan Li(李青璇), Hao Long(龙浩), Jin-Zhao Wu(吴瑾照), Lei-Ying Ying(应磊莹), Zhi-Wei Zheng(郑志威), Zhi-Ren Qiu(丘志仁), and Bao-Ping Zhang(张保平). Chin. Phys. B, 2020, 29(12): 127802.
[14] Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate
Qi Wang(王琦), Guo-Dong Yuan(袁国栋), Wen-Qiang Liu(刘文强), Shuai Zhao(赵帅), Lu Zhang(张璐), Zhi-Qiang Liu(刘志强), Jun-Xi Wang(王军喜), Jin-Min Li(李晋闽). Chin. Phys. B, 2019, 28(8): 087802.
[15] Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer
Xuee An(安雪娥), Zhengjun Shang(商正君), Chuanhe Ma(马传贺), Xinhe Zheng(郑新和), Cuiling Zhang(张翠玲), Lin Sun(孙琳), Fangyu Yue(越方禹), Bo Li(李波), Ye Chen(陈晔). Chin. Phys. B, 2019, 28(5): 057802.
No Suggested Reading articles found!